公开(公告)号：US20140070271A1

公开(公告)日：2014-03-13

申请号：US14077510

申请日：2013-11-12

Applicant: Denso Corporation

Inventor： Shigeki TAKAHASHI ,  Norihito TOKURA ,  Satoshi SHIRAKI ,  Youichi ASHIDA ,  Akio NAKAGAWA

IPC: H01L29/739

CPC classification number: H01L29/7393 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/405 ,  H01L29/7394

Abstract: A lateral insulated gate bipolar transistor includes a semiconductor substrate including a drift layer, a collector region, a channel layer, an emitter region, a gate insulating layer, a gate electrode, a collector electrode, an emitter electrode, and a barrier layer. The barrier layer is disposed along either side of the collector region and is located to a depth deeper than a bottom of the channel layer. The barrier layer has an impurity concentration that is higher than an impurity concentration of the drift layer. The barrier layer has a first end close to the collector region and a second end far from the collector region. The first end is located between the channel layer and the collector region, and the second end is located on the bottom of the channel layer.

Abstract translation: 横向绝缘栅双极晶体管包括包括漂移层，集电极区域，沟道层，发射极区域，栅极绝缘层，栅电极，集电极，发射极和阻挡层的半导体衬底。 阻挡层沿着集电极区域的两侧设置，并且位于比通道层的底部更深的深度。 阻挡层的杂质浓度高于漂移层的杂质浓度。 阻挡层具有靠近集电极区域的第一端和远离集电极区域的第二端。 第一端位于沟道层和集电极区之间，第二端位于沟道层的底部。