摘要:
The invention relates to an electronic device for radio frequency or power applications, comprising a semiconductor layer supporting electronic components on a support substrate, wherein the support substrate comprises a base layer having a thermal conductivity of at least 30 W/m K and a superficial layer having a thickness of at least 5 μm, the superficial layer having an electrical resistivity of at least 3000 Ohm·cm and a thermal conductivity of at least 30 W/m K. The invention also relates to two processes for manufacturing such a device.
摘要翻译:本发明涉及一种用于射频或电力应用的电子设备,包括:支撑基板上的电子部件的半导体层,其中所述支撑基板包括具有至少30W / m K的热导率的基底层和表面层 具有至少5μm的厚度,表层具有至少3000欧姆·厘米的电阻率和至少30瓦特/米2的热导率。本发明还涉及制造这种装置的两个方法。
摘要:
The invention relates to an electronic device for radiofrequency or power applications, comprising a semiconductor layer supporting electronic components on a support substrate, wherein the support substrate comprises a base layer having a thermal conductivity of at least 30 W/mK and a superficial layer having a thickness of at least 5 μm, the superficial layer having an electrical resistivity of at least 3000 Ohm·cm and a thermal conductivity of at least 30 W/mK. The invention also relates to two processes for manufacturing such a device.