摘要:
High-purity polysilicon granules are prepared by depositing reaction gas on silicon granules in a fluidized bed reactor having: a reactor space comprising at least two zones lying one above the other, the lower zone weakly fluidized by introduction of a silicon-free gas into silicon granules in the lower zone by a plurality of individual dilution gas nozzles, and a second, reaction zone directly abutting the lower zone, the reaction zone heated via its outwardly bounding wall, introducing silicon-containing reaction gas as a vertical high speed gas jet into the reaction zone by reaction gas nozzle(s), forming local reaction gas jets surrounded by bubble-forming fluidized bed, gas decomposing leading to particle growth, wherein the reaction gas has fully or almost fully reacted to chemical equilibrium conversion before reaching the wall or bed surface.
摘要:
High-purity polysilicon granules are prepared by depositing reaction gas on silicon granules in a fluidized bed reactor having: a reactor space comprising at least two zones lying one above the other, the lower zone weakly fluidized by introduction of a silicon-free gas into silicon granules in the lower zone by a plurality of individual dilution gas nozzles, and a second, reaction zone directly abutting the lower zone, the reaction zone heated via its outwardly bounding wall, introducing silicon-containing reaction gas as a vertical high speed gas jet into the reaction zone by reaction gas nozzle(s), forming local reaction gas jets surrounded by bubble-forming fluidized bed, gas decomposing leading to particle growth, wherein the reaction gas has fully or almost fully reacted to chemical equilibrium conversion before reaching the wall or bed surface.
摘要:
A fluidized bed process for the production of polycrystalline silicon granules supplies, in addition to reaction gas, a gas containing 99.5 to 95 mol. percent hydrogen and 0.5 to 5 mol. percent gaseous silicon compounds, and the reactor wall is maintained at the same or a higher temperature than the reaction zone, such that the deposition of silicon on reactor internals is minimized.
摘要:
A fluidized bed process for the production of polycrystalline silicon granules supplies, in addition to reaction gas, a gas containing 99.5 to 95 mol. percent hydrogen and 0.5 to 5 mol. percent gaseous silicon compounds, and the reactor wall is maintained at the same or a higher temperature than the reaction zone, such that the deposition of silicon on reactor internals is minimized.
摘要:
A device is provided for depositing semiconductor material on a heated substrate body, having a stationary current leadthrough, which is guided through the baseplate of the deposition device. This is an electrode mount with an underside, which is arranged above the current leadthrough, and an upper side, which is connected to a carbon electrode into which a substrate body can be fitted. The carbon electrode has a thermal conductivity of >145 W/m*K and a coefficient of thermal expansion which is matched to the coefficient of thermal expansion of silicon.
摘要:
Brittle polysilicon rods having a rod cross-section of 80-99% available for electrical conduction and a flexural strength of 0.1 to 80 N/mm2 are produced by a process wherein the temperature of the bridge of polysilicon rods in the Siemens process is held at a high temperature and the flow rate of chlorosilanes is increased to the maximum within a short time. The rods are easily fragmented with low force, resulting in polysilicon with a low level of metallic impurities.
摘要翻译:具有80-99%的棒状横截面可用于导电和0.1至80N / mm 2的弯曲强度的脆性多晶硅棒通过其中西门子方法中的多晶硅棒桥的温度保持在 高温和氯硅烷的流速在短时间内增加到最大值。 棒以较低的力容易地分裂,导致多晶硅具有低水平的金属杂质。
摘要:
Brittle polysilicon rods having a rod cross-section of 80-99% available for electrical conduction and a flexural strength of 0.1 to 80 N/mm2 are produced by a process wherein the temperature of the bridge of polysilicon rods in the Siemens process is held at a high temperature and the flow rate of chlorosilanes is increased to the maximum within a short time. The rods are easily fragmented with low force, resulting in polysilicon with a low level of metallic impurities.
摘要翻译:具有80-99%的棒状横截面可用于导电和0.1至80N / mm 2的弯曲强度的脆性多晶硅棒通过其中西门子方法中的多晶硅棒桥的温度保持在 高温和氯硅烷的流速在短时间内增加到最大值。 棒以较低的力容易地分裂,导致多晶硅具有低水平的金属杂质。