Annealing of single crystals
    1.
    发明授权
    Annealing of single crystals 失效
    单晶退火

    公开(公告)号:US08470089B2

    公开(公告)日:2013-06-25

    申请号:US12121459

    申请日:2008-05-15

    IPC分类号: C30B1/02

    CPC分类号: C30B29/12 C30B33/02

    摘要: The invention relates to a process for manufacturing a single crystal comprising a rare-earth halide, having improved machining or cleavage behavior, comprising heat treatment in a furnace, the atmosphere of which is brought, for at least 1 hour, to between 0.70 times Tm and 0.995 times Tm of a single crystal comprising a rare-earth halide, Tm representing the melting point of said single crystal, the temperature gradient at any point in the atmosphere of the furnace being less than 15 K/cm for said heat treatment. After carrying out the treatment according to the invention, the single crystals may be machined or cleaved without uncontrolled fracture. The single crystals may be used in a medical imaging device, especially a positron emission tomography system or a gamma camera or a CT scanner, for crude oil exploration, for detection and identification of fissile or radioactive materials, for nuclear and high-energy physics, for astrophysics or for industrial control.

    摘要翻译: 本发明涉及一种制造包含稀土卤化物的单晶的方法,其具有改进的机械加工或断裂行为,包括在其气氛中进行至少1小时的炉中的热处理至0.70倍的Tm 和包含稀土卤化物的单晶的Tm的0.995倍,Tm表示所述单晶的熔点,炉的气氛中的任何点的温度梯度对于所述热处理小于15K / cm。 在进行根据本发明的处理之后,单晶可以被加工或切割而没有不受控制的断裂。 单晶可以用于医学成像装置,特别是正电子发射断层摄影系统或γ照相机或CT扫描仪,用于原子石油勘探,用于核和高能物理学的检测和识别裂变或放射性材料, 用于天体物理学或工业控制。

    ANNEALING OF SINGLE CRYSTALS
    2.
    发明申请

    公开(公告)号:US20130251614A1

    公开(公告)日:2013-09-26

    申请号:US13899708

    申请日:2013-05-22

    IPC分类号: C30B29/12

    CPC分类号: C30B29/12 C30B33/02

    摘要: The invention relates to a process for manufacturing a single crystal comprising a rare-earth halide, having improved machining or cleavage behaviour, comprising heat treatment in a furnace, the atmosphere of which is brought, for at least 1 hour, to between 0.70 times Tm and 0.995 times Tm of a single crystal comprising a rare-earth halide, Tm representing the melting point of said single crystal, the temperature gradient at any point in the atmosphere of the furnace being less than 15 K/cm for said heat treatment. After carrying out the treatment according to the invention, the single crystals may be machined or cleaved without uncontrolled fracture. The single crystals may be used in a medical imaging device, especially a positron emission tomography system or a gamma camera or a CT scanner, for crude oil exploration, for detection and identification of fissile or radioactive materials, for nuclear and high-energy physics, for astrophysics or for industrial control.

    ANNEALING OF SINGLE CRYSTALS
    3.
    发明申请
    ANNEALING OF SINGLE CRYSTALS 失效
    单晶退火

    公开(公告)号:US20090246495A1

    公开(公告)日:2009-10-01

    申请号:US12121459

    申请日:2008-05-15

    IPC分类号: C30B15/14 B32B9/00

    CPC分类号: C30B29/12 C30B33/02

    摘要: The invention relates to a process for manufacturing a single crystal comprising a rare-earth halide, having improved machining or cleavage behaviour, comprising heat treatment in a furnace, the atmosphere of which is brought, for at least 1 hour, to between 0.70 times Tm and 0.995 times Tm of a single crystal comprising a rare-earth halide, Tm representing the melting point of said single crystal, the temperature gradient at any point in the atmosphere of the furnace being less than 15 K/cm for said heat treatment. After carrying out the treatment according to the invention, the single crystals may be machined or cleaved without uncontrolled fracture. The single crystals may be used in a medical imaging device, especially a positron emission tomography system or a gamma camera or a CT scanner, for crude oil exploration, for detection and identification of fissile or radioactive materials, for nuclear and high-energy physics, for astrophysics or for industrial control.

    摘要翻译: 本发明涉及一种制造包含稀土卤化物的单晶的方法,其具有改进的机械加工或断裂行为,包括在其气氛中进行至少1小时的炉中的热处理至0.70倍的Tm 和包含稀土卤化物的单晶的Tm的0.995倍,Tm表示所述单晶的熔点,炉的气氛中的任何点的温度梯度对于所述热处理小于15K / cm。 在进行根据本发明的处理之后,单晶可以被加工或切割而没有不受控制的断裂。 单晶可以用于医学成像装置,特别是正电子发射断层摄影系统或γ照相机或CT扫描仪,用于原子石油勘探,用于核和高能物理学的检测和识别裂变或放射性材料, 用于天体物理学或工业控制。

    Rare-earth halide crystal scintillator with polished sensitive face
    4.
    发明授权
    Rare-earth halide crystal scintillator with polished sensitive face 有权
    具有抛光敏感面的稀土卤化物晶体闪烁体

    公开(公告)号:US09229118B2

    公开(公告)日:2016-01-05

    申请号:US13519834

    申请日:2010-12-22

    IPC分类号: G01T1/10 G01T1/202

    CPC分类号: G01T1/202

    摘要: A single-crystal scintillator material can include at least 50 wt % of rare-earth halide and comprising a polished first face. This material is integrated into an ionizing-radiation detector comprising a photoreceiver, the photoreceiver being optically coupled to the material via a face other than the polished first face. The material provides a good energy resolution and a high light intensity. The polishing may be carried out whatever the crystal orientation of the crystal. Loss of material due to this orientation is therefore prevented.

    摘要翻译: 单晶闪烁体材料可以包括至少50wt%的稀土卤化物并且包括抛光的第一面。 该材料被集成到包括光接收器的电离辐射检测器中,光接收器经由抛光的第一面以外的表面光学耦合到材料。 该材料提供了良好的能量分辨率和高的光强度。 无论晶体的晶体取向如何,都可进行抛光。 因此防止了由于该取向引起的材料损失。

    Rare-Earth Halide Crystal Scintillator With Polished Sensitive Face
    5.
    发明申请
    Rare-Earth Halide Crystal Scintillator With Polished Sensitive Face 有权
    具有抛光敏感面的稀土卤化物晶体闪烁体

    公开(公告)号:US20120286165A1

    公开(公告)日:2012-11-15

    申请号:US13519834

    申请日:2010-12-22

    IPC分类号: C09K11/85 G01T1/202

    CPC分类号: G01T1/202

    摘要: The invention relates to a single-crystal scintillator material comprising at least 50 wt % of rare-earth halide and comprising a polished first face. This material is integrated into an ionizing-radiation detector comprising a photoreceiver, the photoreceiver being optically coupled to the material via a face other than the polished first face. The material provides a good energy resolution and a high light intensity. The polishing may be carried out whatever the crystal orientation of the crystal. Loss of material due to this orientation is therefore prevented.

    摘要翻译: 本发明涉及包含至少50wt%的稀土卤化物并包括抛光的第一面的单晶闪烁体材料。 该材料被集成到包括光接收器的电离辐射检测器中,光接收器经由抛光的第一面以外的表面光学耦合到材料。 该材料提供了良好的能量分辨率和高的光强度。 无论晶体的晶体取向如何,都可进行抛光。 因此防止了由于该取向引起的材料损失。