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公开(公告)号：US20240359991A1
公开(公告)日：2024-10-31
申请号：US18770677
申请日：2024-07-12
发明人： Ching-Shan Lin
CPC分类号： C01B32/956 , C23C14/0635 , C23C14/5806 , C30B29/36 , C30B33/02 , C01P2006/40 , H01L29/1608
摘要： A method of fabricating a silicon carbide material is provided. The method includes the following steps. A first annealing process is performed on a wafer or on an ingot that forms the wafer after wafer slicing. The conditions of the first annealing process include: a heating rate of 10° C./minute to 30° C./minute, an annealing temperature of 2000° C. or less, and a constant temperature annealing time of 2 minutes or more and 4 hours or less for performing the first annealing process. After performing the first annealing process, an average resistivity of the wafer or the ingot is greater than 1010Ω·cm.
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公开(公告)号：US20240352622A1
公开(公告)日：2024-10-24
申请号：US18762896
申请日：2024-07-03
申请人： Wolfspeed, Inc.
发明人： Yuri Khlebnikov , Varad R. Sakhalkar , Caleb A. Kent , Valeri F. Tsvetkov , Michael J. Paisley , Oleksandr Kramarenko , Matthew David Conrad , Eugene Deyneka , Steven Griffiths , Simon Bubel , Adrian R. Powell , Robert Tyler Leonard , Elif Balkas , Jeffrey C. Seaman
CPC分类号： C30B29/36 , C30B23/02 , C30B23/063 , C30B23/066 , C30B31/22 , C30B33/02 , H01L21/0475
摘要： Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.
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3.发明公开公开(公告)号：US20240318352A1
公开(公告)日：2024-09-26
申请号：US18598090
申请日：2024-03-07
申请人： SiCrystal GmbH
发明人： Bernhard Ecker , Maximilian Kowasch , Ralf Müller , Philipp Schuh , Matthias Stockmeier , Daisuke Takegawa , Michael Vogel , Arnd-Dietrich Weber
CPC分类号： C30B33/02 , C30B29/36 , F27B17/0016 , F27D5/0037
摘要： Thermal post-treatment of a silicon carbide (SiC) volume monocrystal which has a substantially cylindrical basic shape with a crystal length in an axial direction, a crystal diameter in a radial direction, a crystal central longitudinal axis extending in the axial direction, and with three boundary surfaces, namely, a bottom surface, a top surface and a circumferential edge surface. The SiC volume monocrystal is brought to a post-treatment temperature in order to reduce mechanical stresses present in the SiC volume monocrystal after completion of the previous growth, wherein an inhomogeneous temperature profile with a radial thermal gradient is set in the SiC volume monocrystal, which rises continuously from the crystal central longitudinal axis to the circumferential edge surface, and a heat exchange of the SiC volume monocrystal with a surrounding free space takes place via free heat radiation on at least two of the three boundary surfaces.
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公开(公告)号：US12046469B2
公开(公告)日：2024-07-23
申请号：US17797874
申请日：2021-02-16
发明人： Takeshi Senda , Shingo Narimatsu
CPC分类号： H01L21/02381 , C23C16/24 , C30B25/16 , C30B25/20 , C30B29/06 , C30B33/02 , H01L21/02008 , H01L21/02433 , H01L21/02532 , H01L21/0262 , H01L21/02658 , C30B15/04
摘要： A semiconductor silicon wafer manufacturing method is provided, where P aggregate defects and SF in an epitaxial layer can be suppressed. A silicon wafer substrate cut from a monocrystal ingot is doped with phosphorus and has a resistivity of 1.05 mΩ·cm or less and a concentration of solid-solution oxygen of 0.9×1018 atoms/cm3. The method includes steps of mirror-polishing substrates and heat treatment, where after the mirror-polishing step, the substrate is kept at a temperature from 700° C. to 850° for 30 to 120 minutes, then after the temperature rise, kept at a temperature from 1100° C. to 1250° for 30 to 120 minutes, and after cooling, kept at a temperature from 700° C. to 450° C. for less than 10 minutes as an experience time. The heat treatment step is performed in a mixture gas of hydrogen and argon. The method includes an epitaxial layer deposition step to a thickness of 1.3 μm to 10.0 μm.
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公开(公告)号：US11993864B2
公开(公告)日：2024-05-28
申请号：US17516956
申请日：2021-11-02
发明人： John B. Abraham , Brian D. Clader , Robert Osiander , Cameron A. Gutgsell , Dalibor J. Todorovski , Scott A. Sperling , Jacob E. Epstein , Timothy M. Sweeney , Elizabeth A. Pogue , Tyrel M. McQueen
IPC分类号： C30B33/02 , C30B29/36 , C30B33/04 , G01R33/032
CPC分类号： C30B33/02 , C30B29/36 , C30B33/04 , G01R33/032
摘要： A method for forming a silicon carbide material with a plurality of negatively charged silicon mono-vacancy defects includes irradiating a silicon carbide sample, annealing the irradiated silicon carbide sample in an annealing operation, and quenching the annealed silicon carbide sample. Quenching may include heating the annealed silicon carbide sample to a maximum temperature and quenching the annealed silicon carbide sample to form the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects.
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公开(公告)号：US11959191B2
公开(公告)日：2024-04-16
申请号：US17601112
申请日：2020-02-05
发明人： Wei Feng Qu , Shizuo Igawa
IPC分类号： C30B29/06 , C30B33/02 , H01L21/322
CPC分类号： C30B29/06 , C30B33/02 , H01L21/322
摘要： A method for manufacturing a silicon single crystal wafer for a multilayer structure device including: using a silicon single crystal wafer with oxygen concentration of 12 ppma (JEITA) or higher and composing an NV region; and performing an RTA treatment in a nitrogen-containing atmosphere and a temperature of 1225° C. or higher, a mirror-polish processing treatment, and a BMD-forming heat treatment manufacturing a silicon single crystal wafer having at least a DZ layer with a thickness of 5 to 12.5 μm and a BMD layer positioned immediately below the DZ layer and a BMD density of 1×1011/cm3 or higher from the silicon single crystal wafer surface. During device formation, the silicon wafer surface stress is absorbed immediately below a surface layer, distortion defects are absorbed by the BMD layer, device formation region strength is enhanced, and surface layer dislocation occurrence and extension is suppressed.
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公开(公告)号：US20240035200A1
公开(公告)日：2024-02-01
申请号：US18028686
申请日：2021-09-23
CPC分类号： C30B35/002 , C30B25/183 , C30B29/60 , C30B29/36 , C30B33/08 , C30B33/02
摘要： A device for growing single crystals, in particular of silicon carbide, includes a crucible, which crucible defines an outer lateral surface and moreover delimits an accommodation space with an axial extension between a bottom section and an opening section, wherein the accommodation space is designed for growing the single crystals, wherein the device includes at least one seed crystal layer, wherein the seed crystal layer is assembled from multiple seed crystal plates in a tessellated manner.
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公开(公告)号：US11859314B2
公开(公告)日：2024-01-02
申请号：US17834238
申请日：2022-06-07
申请人： ZHENGZHOU UNIVERSITY
发明人： Xiaochao Wu , Qingkui Li , Jing Zhang , Kaijun Yang , Chengduo Wang , Jilin He
摘要： A method for preparing large size beta-type ammonium tetramolybdate monocrystal particle includes industrial ammonium molybdate, ammonia, de-ionized water are used to prepare ammonium molybdate solution with concentration of 0.2˜0.6 g/ml; pH is adjusted to 5˜7, temperature is adjusted to the first temperature of 70˜90° C. to obtain the first ammonium molybdate solution; beta-type ammonium tetramolybdate crystal seed is put into crystallization container, and the first ammonium molybdate solution is poured in the crystallization container, to form crystallization system; the crystallization system stands still at room temperature, naturally cooling, the beta-type ammonium tetramolybdate crystal seed grows into large size beta-type ammonium tetramolybdate monocrystal particle. A beta-type ammonium tetramolybdate crystal seed is obtained by constant-temperature crystallization at 70˜90° C. The obtained beta-type ammonium tetramolybdate crystal seed is put stewing in the first ammonium molybdate solution and is naturally cooling to produce large size beta-type ammonium tetramolybdate monocrystal particle forms.
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公开(公告)号：US20230420275A1
公开(公告)日：2023-12-28
申请号：US18244041
申请日：2023-09-08
IPC分类号： H01L21/67 , H01L21/673 , F27D7/02 , H01L21/324 , C30B33/02 , C30B35/00
CPC分类号： H01L21/67109 , H01L21/67323 , F27D7/02 , H01L21/324 , H01L21/67248 , C30B33/02 , C30B35/00
摘要： Apparatus and methods to process one or more wafers are described. The apparatus comprises a chamber defining an upper interior region and a lower interior region. A heater assembly is on the bottom of the chamber body in the lower interior region and defines a process region. A wafer cassette assembly is inside the heater assembly and a motor is configured to move the wafer cassette assembly from the lower process region inside the heater assembly to the upper interior region.
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公开(公告)号：US20230340690A1
公开(公告)日：2023-10-26
申请号：US18342986
申请日：2023-06-28
发明人： Carissima Marie Hudson , HyungMin Lee , JaeWoo Ryu , Richard J. Phillips , Robert Wendell Standley
摘要： Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod or optionally the center slab may be annealed in a thermal donor kill cycle prior to measuring the resistivity, and the annealed rod or slab is irradiated with light in order to enhance the relaxation rate and enable more rapid resistivity measurement.
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