公开(公告)号：US07867841B2

公开(公告)日：2011-01-11

申请号：US11968242

申请日：2008-01-02

申请人： Dong-Chan Lim ,  Byeong-Yun Nam ,  Soo-Ik Jang ,  In-Soo Jung

发明人： Dong-Chan Lim ,  Byeong-Yun Nam ,  Soo-Ik Jang ,  In-Soo Jung

IPC分类号： H01L21/8238

CPC分类号： H01L21/76283 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1203

摘要： A method of forming a semiconductor device can include forming a trench in a semiconductor substrate to define an active region. The trench is filled with a first device isolation layer. A portion of the first device isolation layer is etched to recess a top surface of the first device isolation layer below an adjacent top surface of the active region of the semiconductor substrate and to partially expose a sidewall of the active region. The exposed sidewall of the active region is epitaxially grown to form an extension portion of the active region that extends partially across the top surface of the first device isolation layer in the trench. A second device isolation layer is formed on the recessed first device isolation layer in the trench. The second device isolation layer is etched to expose a top surface of the extension portion of the active region and leave a portion of the second device isolation layer between extension portions of active regions on opposite sides of the trench. An interlayer dielectric is formed on the semiconductor substrate and the second device isolation layer. A conductive contact is formed extending through the interlayer dielectric layer and directly contacting at least a portion of both the active region and the extension portion of the active region overlying the second device isolation layer.

摘要翻译： 形成半导体器件的方法可以包括在半导体衬底中形成沟槽以限定有源区。 沟槽填充有第一器件隔离层。 第一器件隔离层的一部分被蚀刻以将第一器件隔离层的顶表面凹陷在半导体衬底的有源区的相邻顶表面下方并且部分地暴露有源区的侧壁。 有源区的暴露的侧壁被外延生长以形成有源区的延伸部分，部分地延伸穿过沟槽中的第一器件隔离层的顶表面。 第二器件隔离层形成在沟槽中凹陷的第一器件隔离层上。 蚀刻第二器件隔离层以暴露有源区的延伸部分的顶表面，并且将第二器件隔离层的一部分留在沟槽的相对侧上的有源区的延伸部分之间。 在半导体衬底和第二器件隔离层上形成层间电介质。 形成延伸穿过层间介电层并且直接接触覆盖在第二器件隔离层上的有源区域和有源区域的延伸部分的至少一部分的导电接触。

公开(公告)号：US20080157262A1

公开(公告)日：2008-07-03

申请号：US11968242

申请日：2008-01-02

申请人： Dong-Chan Lim ,  Byeong-Yun Nam ,  Soo-Ik Jang ,  In-Soo Jung

发明人： Dong-Chan Lim ,  Byeong-Yun Nam ,  Soo-Ik Jang ,  In-Soo Jung

IPC分类号： H01L27/00 ,  H01L21/76

CPC分类号： H01L21/76283 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1203

摘要： A method of forming a semiconductor device can include forming a trench in a semiconductor substrate to define an active region. The trench is filled with a first device isolation layer. A portion of the first device isolation layer is etched to recess a top surface of the first device isolation layer below an adjacent top surface of the active region of the semiconductor substrate and to partially expose a sidewall of the active region. The exposed sidewall of the active region is epitaxially grown to form an extension portion of the active region that extends partially across the top surface of the first device isolation layer in the trench. A second device isolation layer is formed on the recessed first device isolation layer in the trench. The second device isolation layer is etched to expose a top surface of the extension portion of the active region and leave a portion of the second device isolation layer between extension portions of active regions on opposite sides of the trench. An interlayer dielectric is formed on the semiconductor substrate and the second device isolation layer. A conductive contact is formed extending through the interlayer dielectric layer and directly contacting at least a portion of both the active region and the extension portion of the active region overlying the second device isolation layer.

摘要翻译： 形成半导体器件的方法可以包括在半导体衬底中形成沟槽以限定有源区。 沟槽填充有第一器件隔离层。 第一器件隔离层的一部分被蚀刻以将第一器件隔离层的顶表面凹陷在半导体衬底的有源区的相邻顶表面下方并且部分地暴露有源区的侧壁。 有源区的暴露的侧壁被外延生长以形成有源区的延伸部分，部分地延伸穿过沟槽中的第一器件隔离层的顶表面。 第二器件隔离层形成在沟槽中凹陷的第一器件隔离层上。 蚀刻第二器件隔离层以暴露有源区的延伸部分的顶表面，并且将第二器件隔离层的一部分留在沟槽的相对侧上的有源区的延伸部分之间。 在半导体衬底和第二器件隔离层上形成层间电介质。 形成延伸穿过层间介电层并且直接接触覆盖在第二器件隔离层上的有源区域和有源区域的延伸部分的至少一部分的导电接触。