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1.发明授权Phase edge phase shift mask enforcing a width of a field gate image and fabrication method thereof 失效实施场栅图像的宽度的相位相移掩模及其制造方法公开(公告)号：US07097949B2
公开(公告)日：2006-08-29
申请号：US10688591
申请日：2003-10-17
申请人： Dong-Hyun Kim , Moon-Hyun Yoo , Jeong-Lim Nam , Yoo-Hyon Kim , Chul-Hong Park , Soo-Han Choi , Young-Chan Ban , Hye-Soo Shin
发明人： Dong-Hyun Kim , Moon-Hyun Yoo , Jeong-Lim Nam , Yoo-Hyon Kim , Chul-Hong Park , Soo-Han Choi , Young-Chan Ban , Hye-Soo Shin
IPC分类号： G01F9/00
摘要： A phase edge phase shift mask and a fabrication method thereof for enforcing a width of a field gate image located on a field region, which is weakened by a two exposure process, by using a phase shift mask and a trim mask on a semiconductor substrate, and enforcing a width of the field gate image to maximize a current driving capability of the semiconductor device.
摘要翻译： 一种相位相移掩模及其制造方法，用于通过在半导体衬底上使用相移掩模和修剪掩模来强化位于通过两次曝光处理削弱的场区域上的场栅图像的宽度， 并施加栅极栅极图像的宽度以最大化半导体器件的电流驱动能力。
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公开(公告)号：US07361435B2
公开(公告)日：2008-04-22
申请号：US11289204
申请日：2005-11-28
申请人： Chul-Hong Park , Moon-Hyun Yoo , Yoo-Hyon Kim , Dong-Hyun Kim , Soo-Han Choi
发明人： Chul-Hong Park , Moon-Hyun Yoo , Yoo-Hyon Kim , Dong-Hyun Kim , Soo-Han Choi
CPC分类号： G03F1/30 , G03F1/32 , G03F1/70 , G03F7/70466
摘要： A method of creating a layout of a set of masks including an alternating phase shifting mask (APSM) and a halftone phase shifting trim mask (HPSTM) is provided. The APSM includes first and second phase shifting areas and a first opaque pattern. The first and second phase shifting areas are disposed adjacent to each other and have different phases for generating destructive interference. Further, the first and second phase shifting areas define an access interconnection line. The first opaque pattern is formed on a transparent substrate to define the first and second phase shifting areas. The HPSTM includes a second opaque pattern on the transparent substrate and a halftone pattern. The second opaque pattern prevents an access interconnection line from being erased. The halftone pattern defines a pass interconnection line connected to the access interconnection line.
摘要翻译： 提供了一种创建包括交替相移掩模（APSM）和半色调相移修剪蒙版（HPSTM）的掩模组的布局的方法。 APSM包括第一和第二相移区域和第一不透明图案。 第一和第二相移区域彼此相邻设置并且具有不同的相位以产生破坏性干扰。 此外，第一和第二相移区域限定了接入互连线。 第一不透明图案形成在透明基板上以限定第一和第二相移区域。 HPSTM在透明基板上包括第二不透明图案和半色调图案。 第二个不透明图案防止访问互连线被擦除。 半色调图案定义了连接到接入互连线的通过互连线。
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3.发明申请公开(公告)号：US20060099522A1
公开(公告)日：2006-05-11
申请号：US11289204
申请日：2005-11-28
申请人： Chul-Hong Park , Moon-Hyun Yoo , Yoo-Hyon Kim , Dong-Hyun Kim , Soo-Han Choi
发明人： Chul-Hong Park , Moon-Hyun Yoo , Yoo-Hyon Kim , Dong-Hyun Kim , Soo-Han Choi
IPC分类号： G03F1/00
CPC分类号： G03F1/30 , G03F1/32 , G03F1/70 , G03F7/70466
摘要： A set of masks including an alternating phase shifting mask (APSM) and a halftone phase shifting trim mask (HPSTM) is provided. The APSM includes first and second phase shifting areas and a first opaque pattern. The first and second phase shifting areas are disposed adjacent to each other and have different phases for generating destructive interference. Further, the first and second phase shifting areas define an access interconnection line. The first opaque pattern is formed on a transparent substrate to define the first and second phase shifting areas. The HPSTM includes a second opaque pattern on the transparent substrate and a halftone pattern. The second opaque pattern prevents an access interconnection line from being erased. The halftone pattern defines a pass interconnection line connected to the access interconnection line.
摘要翻译： 提供了包括交替相移掩模（APSM）和半色调相移修剪蒙版（HPSTM）的一组掩模。 APSM包括第一和第二相移区域和第一不透明图案。 第一和第二相移区域彼此相邻设置并且具有不同的相位以产生破坏性干扰。 此外，第一和第二相移区域限定了接入互连线。 第一不透明图案形成在透明基板上以限定第一和第二相移区域。 HPSTM在透明基板上包括第二不透明图案和半色调图案。 第二个不透明图案防止访问互连线被擦除。 半色调图案定义了连接到接入互连线的通过互连线。
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公开(公告)号：US06998199B2
公开(公告)日：2006-02-14
申请号：US10302529
申请日：2002-11-22
申请人： Chul-Hong Park , Moon-Hyun Yoo , Yoo-Hyon Kim , Dong-Hyun Kim , Soo-Han Choi
发明人： Chul-Hong Park , Moon-Hyun Yoo , Yoo-Hyon Kim , Dong-Hyun Kim , Soo-Han Choi
CPC分类号： G03F1/30 , G03F1/32 , G03F1/70 , G03F7/70466
摘要： A set of masks including an alternating phase shifting mask (APSM) and a halftone phase shifting trim mask (HPSTM) is provided. The APSM includes first and second phase shifting areas and a first opaque pattern. The first and second phase shifting areas are disposed adjacent to each other and have different phases for generating destructive interference. Further, the first and second phase shifting areas define an access interconnection line. The first opaque pattern is formed on a transparent substrate to define the first and second phase shifting areas. The HPSTM includes a second opaque pattern on the transparent substrate and a halftone pattern. The second opaque pattern prevents an access interconnection line from being erased. The halftone pattern defines a pass interconnection line connected to the access interconnection line.
摘要翻译： 提供了包括交替相移掩模（APSM）和半色调相移修剪蒙版（HPSTM）的一组掩模。 APSM包括第一和第二相移区域和第一不透明图案。 第一和第二相移区域彼此相邻设置并且具有不同的相位以产生破坏性干扰。 此外，第一和第二相移区域限定了接入互连线。 第一不透明图案形成在透明基板上以限定第一和第二相移区域。 HPSTM在透明基板上包括第二不透明图案和半色调图案。 第二个不透明图案防止访问互连线被擦除。 半色调图案定义了连接到接入互连线的通过互连线。
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