公开(公告)号：US07208454B2

公开(公告)日：2007-04-24

申请号：US10885951

申请日：2004-07-08

申请人： Dong-Jin Park ,  Kyung-Dae Kim ,  Hoi-Sik Chung ,  Pil-Kwon Jun ,  Young-Ho Kim

发明人： Dong-Jin Park ,  Kyung-Dae Kim ,  Hoi-Sik Chung ,  Pil-Kwon Jun ,  Young-Ho Kim

IPC分类号： C11D7/50

CPC分类号： C11D7/06 ,  C11D7/10 ,  C11D7/264 ,  C11D7/32 ,  C11D7/5004 ,  C11D11/0047 ,  Y10S134/902

摘要： A cleaning solution for a cured anti-reflective layer (AFC layer) component and a method of cleaning an anti-reflective layer component by using the same, wherein the cleaning solution comprises about 5–30% by weight of ammonium hydroxide, about 23–70% by weight of an organic solvent and about 10–50% by weight of water. When an organic material is spattered to adjacent equipment during implementing a coating process onto a wafer, the equipment is detached and then is dipped into the cleaning solution. Thereafter, the equipment is rinsed and dried. Cured and non-cured organic materials are advantageously removed. Cured organic materials left for a period of time, particularly anti-reflective layer components are advantageously removed.

摘要翻译： 用于固化的抗反射层（AFC层）组分的清洁溶液和通过使用该清洁溶液清洁抗反射层组分的方法，其中所述清洁溶液包含约5-30重量％的氢氧化铵，约23- 70重量％的有机溶剂和约10-50重量％的水。 当在晶片上实施涂覆工艺期间将有机材料溅射到相邻设备时，将设备分离，然后浸入清洁溶液中。 此后，将设备冲洗干燥。 有机地除去固化和未固化的有机材料。 留下一段时间的固化有机材料，特别是抗反射层组分有利地被去除。

公开(公告)号：US06777379B2

公开(公告)日：2004-08-17

申请号：US10136370

申请日：2002-05-02

申请人： Dong-Jin Park ,  Kyung-Dae Kim ,  Hoi-Sik Chung ,  Pil-Kwon Jun ,  Young-Ho Kim

发明人： Dong-Jin Park ,  Kyung-Dae Kim ,  Hoi-Sik Chung ,  Pil-Kwon Jun ,  Young-Ho Kim

IPC分类号： B08B304

CPC分类号： C11D7/06 ,  C11D7/10 ,  C11D7/264 ,  C11D7/32 ,  C11D7/5004 ,  C11D11/0047 ,  Y10S134/902

摘要： A cleaning solution for a cured anti-reflective layer (AFC layer) component and a method of cleaning an anti-reflective layer component by using the same, wherein the cleaning solution comprises about 5-30% by weight of ammonium hydroxide, about 23-70% by weight of an organic solvent and about 10-50% by weight of water. When an organic material is spattered to adjacent equipment during implementing a coating process onto a wafer, the equipment is detached and then is dipped into the cleaning solution. Thereafter, the equipment is rinsed and dried. Cured and non-cured organic materials are advantageously removed. Cured organic materials left for a period of time, particularly anti-reflective layer components are advantageously removed.

摘要翻译： 用于固化的抗反射层（AFC层）组分的清洁溶液和通过使用该清洁溶液清洁抗反射层组分的方法，其中所述清洁溶液包含约5-30重量％的氢氧化铵，约23- 70重量％的有机溶剂和约10-50重量％的水。 当在晶片上实施涂覆工艺期间将有机材料溅射到相邻设备时，将设备分离，然后浸入清洁溶液中。 此后，将设备冲洗干燥。 有机地除去固化和未固化的有机材料。 留下一段时间的固化有机材料，特别是抗反射层组分有利地被去除。

公开(公告)号：US07081182B2

公开(公告)日：2006-07-25

申请号：US10205621

申请日：2002-07-26

申请人： Jae-Jun Ryu ,  Kyung-Dae Kim ,  June-Ing Gill ,  Yong-Woo Heo

发明人： Jae-Jun Ryu ,  Kyung-Dae Kim ,  June-Ing Gill ,  Yong-Woo Heo

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L22/26

摘要： The present invention relates to a method and apparatus for automatically measuring the concentration of total organic carbon (TOC) in chemicals and ultra-pure water that are used in a wet etch process. The apparatus includes a sampling line extending from a processing bath, and a pump, for extracting a fluid sample from the processing bath, a buffer for filtering foreign material or air bubbles from the fluid, and an analyzer for analyzing the concentration of TOC in the fluid.