Methods of fabricating image sensors including impurity layer isolation regions
    1.
    发明授权
    Methods of fabricating image sensors including impurity layer isolation regions 有权
    制造包括杂质层隔离区域的图像传感器的方法

    公开(公告)号:US08415189B2

    公开(公告)日:2013-04-09

    申请号:US12512779

    申请日:2009-07-30

    IPC分类号: H01L21/00

    摘要: Image sensors include a pixel region and a logic region. Pixel isolation regions in the pixel region include pixel isolation region walls that are less sloped than logic isolation region walls in the logic region. An impurity layer also may be provided adjacent at least some of the pixel isolation region walls, wherein at least some of the logic isolation region walls are free of the impurity layer. The impurity layer and/or the less sloped logic isolation region walls may also be provided for NMOS devices in the logic region but not for PMOS devices in the logic region. Doped sacrificial layers may be used to fabricate the impurity layer.

    摘要翻译: 图像传感器包括像素区域和逻辑区域。 像素区域中的像素隔离区域包括比逻辑区域中的逻辑隔离区域壁更少倾斜的像素隔离区域壁。 也可以在至少一些像素隔离区域壁附近提供杂质层,其中至少一些逻辑隔离区域壁不含杂质层。 也可以为逻辑区域中的NMOS器件提供杂质层和/或较小倾斜的逻辑隔离区域壁,但不提供给逻辑区域中的PMOS器件。 可以使用掺杂的牺牲层来制造杂质层。

    METHODS OF FABRICATING IMAGE SENSORS INCLUDING IMPURITY LAYER ISOLATION REGIONS
    2.
    发明申请
    METHODS OF FABRICATING IMAGE SENSORS INCLUDING IMPURITY LAYER ISOLATION REGIONS 有权
    制造图像传感器的方法,包括沉积层分离区域

    公开(公告)号:US20100015747A1

    公开(公告)日:2010-01-21

    申请号:US12512779

    申请日:2009-07-30

    IPC分类号: H01L31/18

    摘要: Image sensors include a pixel region and a logic region. Pixel isolation regions in the pixel region include pixel isolation region walls that are less sloped than logic isolation region walls in the logic region. An impurity layer also may be provided adjacent at least some of the pixel isolation region walls, wherein at least some of the logic isolation region walls are free of the impurity layer. The impurity layer and/or the less sloped logic isolation region walls may also be provided for NMOS devices in the logic region but not for PMOS devices in the logic region. Doped sacrificial layers may be used to fabricate the impurity layer.

    摘要翻译: 图像传感器包括像素区域和逻辑区域。 像素区域中的像素隔离区域包括比逻辑区域中的逻辑隔离区域壁更少倾斜的像素隔离区域壁。 也可以在至少一些像素隔离区域壁附近提供杂质层,其中至少一些逻辑隔离区域壁不含杂质层。 也可以为逻辑区域中的NMOS器件提供杂质层和/或较小倾斜的逻辑隔离区域壁,但不提供给逻辑区域中的PMOS器件。 可以使用掺杂的牺牲层来制造杂质层。

    IMAGE SENSORS INCLUDING MULTIPLE SLOPE/IMPURITY LAYER ISOLATION REGIONS, AND METHODS OF FABRICATING SAME
    3.
    发明申请
    IMAGE SENSORS INCLUDING MULTIPLE SLOPE/IMPURITY LAYER ISOLATION REGIONS, AND METHODS OF FABRICATING SAME 有权
    图像传感器,包括多个斜率/绝对层隔离区域及其制造方法

    公开(公告)号:US20080035963A1

    公开(公告)日:2008-02-14

    申请号:US11668016

    申请日:2007-01-29

    IPC分类号: H01L31/113

    摘要: Image sensors include a pixel region and a logic region. Pixel isolation regions in the pixel region include pixel isolation region walls that are less sloped than logic isolation region walls in the logic region. An impurity layer also may be provided adjacent at least some of the pixel isolation region walls, wherein at least some of the logic isolation region walls are free of the impurity layer. The impurity layer and/or the less sloped logic isolation region walls may also be provided for NMOS devices in the logic region but not for PMOS devices in the logic region. Doped sacrificial layers may be used to fabricate the impurity layer.

    摘要翻译: 图像传感器包括像素区域和逻辑区域。 像素区域中的像素隔离区域包括比逻辑区域中的逻辑隔离区域壁更少倾斜的像素隔离区域壁。 也可以在至少一些像素隔离区域壁附近提供杂质层,其中至少一些逻辑隔离区域壁不含杂质层。 也可以为逻辑区域中的NMOS器件提供杂质层和/或较小倾斜的逻辑隔离区域壁,但不提供给逻辑区域中的PMOS器件。 可以使用掺杂的牺牲层来制造杂质层。

    Image sensors including impurity layer adjacent isolation region
    4.
    发明授权
    Image sensors including impurity layer adjacent isolation region 有权
    图像传感器包括杂质层相邻的隔离区域

    公开(公告)号:US07586170B2

    公开(公告)日:2009-09-08

    申请号:US11668016

    申请日:2007-01-29

    IPC分类号: H01L31/00 H01L31/062

    摘要: Image sensors include a pixel region and a logic region. Pixel isolation regions in the pixel region include pixel isolation region walls that are less sloped than logic isolation region walls in the logic region. An impurity layer also may be provided adjacent at least some of the pixel isolation region walls, wherein at least some of the logic isolation region walls are free of the impurity layer. The impurity layer and/or the less sloped logic isolation region walls may also be provided for NMOS devices in the logic region but not for PMOS devices in the logic region. Doped sacrificial layers may be used to fabricate the impurity layer.

    摘要翻译: 图像传感器包括像素区域和逻辑区域。 像素区域中的像素隔离区域包括比逻辑区域中的逻辑隔离区域壁更少倾斜的像素隔离区域壁。 也可以在至少一些像素隔离区域壁附近提供杂质层,其中至少一些逻辑隔离区域壁不含杂质层。 也可以为逻辑区域中的NMOS器件提供杂质层和/或较小倾斜的逻辑隔离区域壁,但不提供给逻辑区域中的PMOS器件。 可以使用掺杂的牺牲层来制造杂质层。