Expanded mode wave guide semiconductor modulation
    2.
    发明授权
    Expanded mode wave guide semiconductor modulation 失效
    扩展模式波导半导体调制

    公开(公告)号:US6088500A

    公开(公告)日:2000-07-11

    申请号:US826989

    申请日:1997-04-11

    摘要: An electroabsorptive modulator (EAM) for providing RF modulation of optical inputs signals. The EAM is formed as a semiconductor waveguide on a semiconductor substrate with an optical input port and an optical output port and electrical contacts for connection to the RF input. The configuration of the waveguide portion of the EAM is optimized to provide a modal match with the particular optical device to which the EAM is to be connected, for example, an optical fiber. By optimizing the modal match between the EAM and the optical device to which the EAM is connected, the optical insertion losses are minimized thereby improving the overall performance of the optical system. The device is formed from a plurality of quantum wells selected to compensate for the increased mode field dimensions.

    摘要翻译: 一种用于提供光输入信号的RF调制的电吸收调制器(EAM)。 EAM形成为具有光输入端口和光输出端口的半导体衬底上的半导体波导和用于连接到RF输入的电触点。 EAM的波导部分的配置被优化以提供与要连接EAM的特定光学装置(例如光纤)的模式匹配。 通过优化EAM与EAM连接的光学装置之间的模态匹配,光插入损耗最小化,从而提高光学系统的整体性能。 该器件由多个选择用于补偿增加的模场尺寸的量子阱形成。

    Metal semiconductor metal photodetectors
    3.
    发明授权
    Metal semiconductor metal photodetectors 失效
    金属半导体金属光电探测器

    公开(公告)号:US5631490A

    公开(公告)日:1997-05-20

    申请号:US371247

    申请日:1995-01-11

    IPC分类号: H01L31/108 H01L27/14

    CPC分类号: H01L31/1085

    摘要: MSM-photodetectors are produced using implanted n-type Si and interdigitated electrodes deposited on the implanted surface. The implantation process decreases the carrier lifetime by several orders of magnitude. By implanting silicon with fluorine or oxygen, the bandwidth is increased relatively to unimplanted MSM photodetectors. Exemplary implanted photodetectors exhibited 3-dB bandwidths which were faster by an order of magnitude compared to their unimplanted counterparts. The detectors are thus compatible with multi-gigabit per second operation and monolithic integration with silicon electronics.

    摘要翻译: 使用注入的n型Si和沉积在植入表面上的叉指电极产生MSM光电检测器。 注入工艺将载流子寿命降低数个数量级。 通过用氟或氧注入硅,相对于未投影的MSM光电探测器,带宽增加。 示例性的植入光电探测器表现出3-dB带宽,与其未被植入的对应物相比,其速度比一个数量级更快。 因此,检测器与每秒千兆位操作兼容,并与硅电子器件进行单片集成。