公开(公告)号：US5926697A

公开(公告)日：1999-07-20

申请号：US947793

申请日：1997-10-09

申请人： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Jin-Yuan Lee ,  Hsien Wei Chin

发明人： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Jin-Yuan Lee ,  Hsien Wei Chin

IPC分类号： H01L21/02 ,  H01L21/761 ,  H01L23/525 ,  H01L21/76

CPC分类号： H01L28/87 ,  H01L21/761 ,  H01L23/5258 ,  H01L2924/0002

摘要： An improved and new structure and method for forming a guard ring in an integrated circuit having at least one level of polysilicon wiring has been developed. The guard ring is formed without necessitating additional manufacturing process steps and the guard ring is bonded to the semiconductor substrate, thereby providing a superior barrier to diffusion of moisture and contaminants from a window in the insulating layers to the semiconductor device regions.

摘要翻译： 已经开发了用于在具有至少一个级别的多晶硅布线的集成电路中形成保护环的改进和新的结构和方法。 保护环形成，而不需要额外的制造工艺步骤，并且保护环结合到半导体衬底，从而为水分和污染物从绝缘层中的窗口扩散到半导体器件区域提供了优越的屏障。

公开(公告)号：US5879966A

公开(公告)日：1999-03-09

申请号：US301536

申请日：1994-09-06

申请人： Jin-Yuan Lee ,  Chue-San Yoo ,  Hsien Wei Chin

发明人： Jin-Yuan Lee ,  Chue-San Yoo ,  Hsien Wei Chin

IPC分类号： H01L23/525 ,  H01L21/82

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  Y10S148/055

摘要： An improved structure and method of forming a protective layer over an opening in insulation layers over a fuse is presented. The protective layer prevents contaminates from entering the exposed insulation layers in a fuse opening while not interfering with the laser trimming of the fuse. An opening through the layers over a fuse is made forming vertical sidewalls which expose portions of the insulation layers. A protective layer is formed over the insulation layer, the sidewalls and fuse thus preventing contaminates from diffusing into the exposed insulation layers. A second opening is made in the protective layer over the fuse link to allow a laser beam to melt the underlying fuse link.

摘要翻译： 提出了在保险丝上的绝缘层的开口上形成保护层的改进的结构和方法。 保护层防止污染物进入保险丝开口中暴露的绝缘层，而不会干扰保险丝的激光修整。 形成穿过熔丝的层的开口形成垂直侧壁，其暴露部分绝缘层。 在绝缘层，侧壁和熔断体上形成保护层，从而防止污染物扩散到暴露的绝缘层中。 在熔断体上方的保护层中形成第二个开口，以允许激光束熔化下面的熔断体。

公开(公告)号：US5965927A

公开(公告)日：1999-10-12

申请号：US157513

申请日：1998-09-21

申请人： Jin-Yuan Lee ,  Chue-San Yoo ,  Hsien Wei Chin

发明人： Jin-Yuan Lee ,  Chue-San Yoo ,  Hsien Wei Chin

IPC分类号： H01L23/525 ,  H01L29/00

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  Y10S148/055

摘要： An improved structure and method of forming a protective layer over an opening in insulation layers over a fuse is presented. The protective layer prevents contaminates from entering the exposed insulation layers in a fuse opening while not interfering with the laser trimming of the fuse. An opening through the layers over a fuse is made forming vertical sidewalls which expose portions of the insulation layers. A protective layer is formed over the insulation layer, the sidewalls and fuse thus preventing contaminates from diffusing into the exposed insulation layers. A second opening is made in the protective layer over the fuse link to allow a laser beam to melt the underlying fuse link.

摘要翻译： 提出了在保险丝上的绝缘层的开口上形成保护层的改进的结构和方法。 保护层防止污染物进入保险丝开口中暴露的绝缘层，而不会干扰保险丝的激光修整。 形成穿过熔丝的层的开口形成垂直侧壁，其暴露部分绝缘层。 在绝缘层，侧壁和熔断体上形成保护层，从而防止污染物扩散到暴露的绝缘层中。 在熔断体上方的保护层中形成第二个开口，以允许激光束熔化下面的熔断体。

公开(公告)号：US5705436A

公开(公告)日：1998-01-06

申请号：US703085

申请日：1996-08-26

申请人： Hsien Wei Chin ,  Jhon-Jhy Liaw

发明人： Hsien Wei Chin ,  Jhon-Jhy Liaw

IPC分类号： H01L21/02 ,  H01L21/8244

CPC分类号： H01L28/20 ,  H01L27/11

摘要： A physical implementation and method for achieving it are described for a load resistor and bus line subcircuit such as might be used in an SRAM cell. This was achieved by using two layers of polysilicon. The first polysilicon layer has low resistivity and serves to make effective contact to the drain regions of the FETs involved in the circuit. The second polysilicon layer has high resistivity and is used to form the load resistor as well as the collector bus line and resistor-drain connection. Formation of the latter two objects is achieved by providing a refractory metal underlay to the second polysilicon layer in the appropriate areas and then heating the structure so as to convert said refractory metal to its silicide. This process avoids the use of an ion implantation step during which some encroachment of the ions could occur, thereby retaining good control of the resistor dimensions.

摘要翻译： 描述了用于实现其的物理实现和方法，用于负载电阻器和总线线路电路，例如可用于SRAM单元。 这是通过使用两层多晶硅来实现的。 第一多晶硅层具有低电阻率并且用于有效接触与电路相关的FET的漏极区域。 第二多晶硅层具有高电阻率，用于形成负载电阻以及集电极母线和电阻 - 漏极连接。 后两个物体的形成是通过在合适的区域中向第二多晶硅层提供难熔金属底层，然后加热该结构以将所述难熔金属转化为其硅化物来实现的。 该过程避免使用离子注入步骤，在该步骤期间可能会发生一些离子侵入，从而保持对电阻器尺寸的良好控制。