Vertical pin diode
    2.
    发明授权

    公开(公告)号:US10170641B2

    公开(公告)日:2019-01-01

    申请号:US15431926

    申请日:2017-02-14

    Abstract: A vertical positive-intrinsic-negative (pin) diode includes a semiconductor substrate in which a P-type region, an intrinsic region, and an N-type region are sequentially disposed in a vertical direction to be formed therein, a first electrode formed on one surface of the semiconductor substrate to be in electrical contact with the P-type region, and a second electrode formed on the other surface of the semiconductor substrate to be in electrical contact with the N-type region, wherein the P-type region and the N-type region are respectively disposed in an upper portion and a lower portion of the semiconductor substrate to be opposite to each other.

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