公开(公告)号：US20190285475A1

公开(公告)日：2019-09-19

申请号：US16122486

申请日：2018-09-05

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang-Pil HAN ,  Jun Hwan SHIN ,  Il Min LEE ,  Kyung Hyun PARK

IPC: G01J3/453 ,  G02B5/02 ,  G01J3/06 ,  G02B27/14

Abstract: An image acquisition apparatus including a beam source, a beam expander, a beam splitter, an interferometer, a sample, a beam diffuser, a telecentric f-θ lens, a beam scanner, and a beam detector uses a terahertz wave to acquire a surface image and a depth image of the sample.

公开(公告)号：US20200150420A1

公开(公告)日：2020-05-14

申请号：US16668574

申请日：2019-10-30

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Eui Su LEE ,  Kyung Hyun PARK ,  IL MIN LEE ,  Kiwon MOON ,  Dong Woo PARK ,  Hyun Soo KIM ,  Ho Jin LEE ,  Jeong Woo PARK ,  Jun Hwan SHIN ,  Kyeong Sun CHOI ,  Dahye CHOI

IPC: G02B26/12 ,  G02B26/08 ,  G02B26/10

Abstract: Provided are a polygon mirror assembly and a scan device. A polygon mirror assembly includes: a polygon mirror including a plurality of reflection surfaces spaced apart from a rotation axis by a predetermined distance; a first motor for rotating the polygon mirror around the rotation axis; a second motor for moving the polygon mirror in a first axial direction such that the rotation axis is tilted while the first motor rotates the polygon mirror; and a clock signal extraction surface for extracting a clock signal for detecting a change in a rotational speed of the first motor.

公开(公告)号：US20250072019A1

公开(公告)日：2025-02-27

申请号：US18770484

申请日：2024-07-11

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jun Hwan SHIN ,  Young Ho Kim ,  Eui Su Lee ,  Jin Chul Cho ,  Soo Cheol Kang ,  Dong Woo Park ,  II Min Lee

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/20 ,  H01L29/66

Abstract: Disclosed herein are a Schottky barrier diode (SBD) and a method of manufacturing the same. The SBD includes a substrate, an ohmic layer formed on a portion of an upper portion of the substrate, a Schottky layer formed on a portion of an upper portion of the ohmic layer, an insulating layer formed on a portion of the upper portion of the ohmic layer, a low-k material layer formed on a portion of the upper portion of the substrate, and a Schottky metal layer formed on portions of upper portions of the low-k material layer and the insulating layer.

公开(公告)号：US20200335639A1

公开(公告)日：2020-10-22

申请号：US16848826

申请日：2020-04-14

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Dong Woo PARK ,  Kyung Hyun PARK ,  Jeong Woo PARK ,  Jun Hwan SHIN ,  Eui Su LEE ,  Hyun Soo KIM ,  Kiwon MOON ,  IL MIN LEE

IPC: H01L29/872 ,  H01L29/205 ,  H01L29/47 ,  H01L21/306 ,  H01L21/285 ,  H01L29/66

Abstract: A Schottky barrier diode includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, and a metal layer formed on the second semiconductor layer to form a Schottky barrier, wherein the first semiconductor layer and the second semiconductor layer are formed of different materials, and a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a set value.