PHOTO DIODE
    2.
    发明申请
    PHOTO DIODE 有权
    照片二极管

    公开(公告)号:US20160320573A1

    公开(公告)日:2016-11-03

    申请号:US15143148

    申请日:2016-04-29

    CPC classification number: G02B6/4201 H01L31/09 H01S5/0262 H01S5/1007

    Abstract: Disclosed is a photo diode. The photo diode includes: at least two branched waveguides configured to receive beating signals; absorbing layers disposed in vertical directions to the waveguides, and disposed while being spaced apart from distal ends of the waveguides by a predetermined interval; and one or more intermediate layers formed based on the distal ends of the waveguides and disposed with the absorbing layers at upper end of the one or more intermediate layers.

    Abstract translation: 公开了一种光电二极管。 所述光电二极管包括:至少两个分支波导,被配置为接收跳动信号; 沿垂直方向设置在波导上的吸收层,并且与波导的远端间隔开预定间隔; 以及基于波导的远端形成的一个或多个中间层,并且在一个或多个中间层的上端设置有吸收层。

    IMAGE GENERATING DEVICE SETTING VIRTUAL TRANSMITTERS AND RECEIVERS, AND METHOD OF OPERATING THE SAME

    公开(公告)号:US20240134036A1

    公开(公告)日:2024-04-25

    申请号:US18480795

    申请日:2023-10-04

    CPC classification number: G01S13/89 G01S13/08

    Abstract: Disclosed is an image generating device, which includes a measurement device including a plurality of transmitters and a plurality of receivers for a multistatic measurement of an object, an image preprocessing device that receives a raw image signal corresponding to the multistatic measurement from the measurement device and generates a preprocessed image signal based on the raw image signal, an image amplifier that generates an amplified image signal based on the preprocessed image signal, and an image restorer that generates a restored image signal corresponding to the object based on the amplified image signal, and the image amplifier is further configured to set up a first virtual transmitter and a first virtual receiver, to obtain first measurement data of a first target transmitter closest to the first virtual transmitter among the plurality of transmitters and a first target receiver closest to the first virtual receiver among the plurality of receivers.

    TERAHERTZ REFLECTION IMAGING SYSTEM USING ROTATING POLYHEDRAL MIRROR AND TELECENTRIC F-THETA LENS

    公开(公告)号:US20190120756A1

    公开(公告)日:2019-04-25

    申请号:US16144504

    申请日:2018-09-27

    Abstract: Disclosed is a terahertz, reflection imaging system using a rotating polyhedral mirror and a telecentric f-theta lens. The terahertz reflection imaging system may include a light source configured to output a terahertz, beam, a rotating polyhedral mirror of which a mirror is combined with each of polyhedral faces, and configured to reflect the terahertz beam transmitted from the light source in a direction in which a specimen is disposed, a telecentric f-theta lens configured to transmit the terahertz beam reflected from the rotating polyhedral mirror to the specimen and correct a chief ray of the terahertz beam reflected from the rotating polyhedral mirror to be parallel to an optical axis of the telecentric f-theta lens, and a detector configured to detect a terahertz beam reflected from the specimen.

    RECTIFIER AND TERAHERTZ DETECTOR USING THE SAME
    7.
    发明申请
    RECTIFIER AND TERAHERTZ DETECTOR USING THE SAME 审中-公开
    整流器和TERAHERTZ检测器使用它

    公开(公告)号:US20150179842A1

    公开(公告)日:2015-06-25

    申请号:US14307856

    申请日:2014-06-18

    CPC classification number: H01L31/11 H01L31/10

    Abstract: Disclosed is a rectifier capable of performing a high speed rectifying operation, and includes: a first semiconductor layer; a second semiconductor layer; and a third semiconductor layer, in which the first semiconductor layer and the third semiconductor layer are formed of semiconductor layers having the same type, and the second semiconductor layer is formed between the first semiconductor layer and the third semiconductor layer, is formed of a semiconductor layer having a different type from that of the first semiconductor layer and the third semiconductor layer, and is formed in graded doped state.

    Abstract translation: 公开了一种能够执行高速整流操作的整流器,包括:第一半导体层; 第二半导体层; 以及第三半导体层,其中第一半导体层和第三半导体层由具有相同类型的半导体层形成,并且第二半导体层形成在第一半导体层和第三半导体层之间,由半导体 层与第一半导体层和第三半导体层的类型不同,并且以渐变掺杂状态形成。

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