公开(公告)号：US20170168371A1

公开(公告)日：2017-06-15

申请号：US15193889

申请日：2016-06-27

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Duk Jun KIM ,  Young Ho KO ,  Dong Young KIM ,  Won Seok HAN ,  Yong Hwan KWON ,  Jong Hoi KIM ,  Byung Seok CHOI

IPC: G02F1/225 ,  H01L31/18

CPC classification number: G02F1/2257 ,  G02F2001/212

Abstract: There is provided a method for manufacturing a Mach-Zehnder electrooptic modulator including forming an intrinsic semiconductor layer including a Group III-V compound semiconductor on a Group III-V compound semiconductor substrate having an active region and a passive region, doping a first impurity in the intrinsic semiconductor layer corresponding to the active region to form a core layer disposed on the substrate and undoped with the first impurity and an upper clad layer disposed on the core layer and including a region doped with the first impurity, and patterning the core layer and the upper clad layer.