Abstract:
Provided is a waveguide photodetector including a semiconductor substrate, a first optical waveguide and a second optical waveguide, which are sequentially laminated on the semiconductor substrate, in which each of the first optical waveguide and the second optical waveguide includes a first portion and a second portion, and the first portion extends from the second portion in a first direction parallel to a top surface of the semiconductor substrate, a refractive index matching layer disposed on the second portion of the second optical waveguide, a clad layer disposed on the refractive index matching layer, and an absorber disposed between the refractive index matching layer and the clad layer. Here, the second optical waveguide has a first conductive-type, the clad layer has a second conductive-type opposite to the first conductive-type, and the refractive index matching layer includes a first semiconductor layer that is an intrinsic semiconductor layer.
Abstract:
An optical alignment device according to an embodiment of the inventive concept includes an optical alignment plate having a first hole and at least one second hole, in which the first hole and the second hole pass through the optical alignment plate, and an optical detection element disposed on the optical alignment plate. Here, the optical detection element includes a substrate having a first surface and a second surface, which face each other, a lens disposed on the first surface, and an optical sensor disposed on the second surface, and the optical detection element vertically overlaps the first hole and the second hole. The lens is exposed to the outside by the first hole, and the second hole is connected with a vacuum suction unit to fix the optical detection element to the optical alignment plate.
Abstract:
An optical waveguide structure includes a substrate and a core structure disposed on the substrate. The substrate includes a first waveguide region, a second waveguide region, and a transition region between the first waveguide region and the second waveguide region. The core structure includes first core segments arranged in a first direction and a second direction crossing the first direction on the transition region. The core structure includes second core segments arranged in the first direction and the second direction on the second waveguide region. The first direction and the second direction are parallel to a top surface of the substrate.
Abstract:
Provided is an apparatus and method for measuring IQ imbalance, and in particular, is an apparatus and method for measuring IQ imbalance for an optical receiver. The apparatus for measuring IQ imbalance for an optical receiver includes a light generating unit generating optical and reference signals to provide the optical and reference signals to an optical receiver, a graph creating unit creating a Lissajous figure by using an in-phase (I) signal and a quadrature-phase (Q) signal output from the optical receiver in response to the optical and reference signals, and a calculating unit calculating IQ imbalance for the optical receiver with reference to the Lissajous figure.
Abstract:
There is provided a method for manufacturing a Mach-Zehnder electrooptic modulator including forming an intrinsic semiconductor layer including a Group III-V compound semiconductor on a Group III-V compound semiconductor substrate having an active region and a passive region, doping a first impurity in the intrinsic semiconductor layer corresponding to the active region to form a core layer disposed on the substrate and undoped with the first impurity and an upper clad layer disposed on the core layer and including a region doped with the first impurity, and patterning the core layer and the upper clad layer.
Abstract:
Provided is a method of measuring signal transmission time difference of a measuring device. The measuring device according to embodiments, by measuring a skew on two optical paths through signal delays of sufficient sizes for skew measurement on the optical paths, even a skew having a minute size can be measured within a measureable range.