公开(公告)号：US11977973B2

公开(公告)日：2024-05-07

申请号：US16669471

申请日：2019-10-30

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE ,  Konkuk University Industrial Cooperation Corp

发明人： Jong Pil Im ,  Bae Ho Park ,  Jeong Hun Kim ,  Seungeon Moon ,  Chansoo Yoon ,  Jaewoo Lee ,  Solyee Im

IPC分类号： G06N3/065 ,  G06N3/049

CPC分类号： G06N3/065 ,  G06N3/049

摘要： A neuron circuit and an operating method thereof are disclosed. The neuron circuit may include an input unit to which an input pulse is applied, a bipolar memristor configured to have one end connected to one end of the input unit, a first capacitor configured to be connected between the one end of the bipolar memristor and a ground, a first diode configured to have an anode connected to the one end of the bipolar component, a second capacitor configured to have one end connected to a cathode of the first diode, a first switch configured to be connected between the one end of the second capacitor and the ground, and a second switch configured to be connected between the anode of the first diode and the other end of the second capacitor.

公开(公告)号：US10062425B2

公开(公告)日：2018-08-28

申请号：US15638758

申请日：2017-06-30

申请人： KONKUK UNIVERSITY INDUSTRIAL COOPERATION CORP

发明人： Bae Ho Park ,  Chansoo Yoon

IPC分类号： G11C11/22 ,  H01L27/115 ,  H01L45/00 ,  H01L49/02 ,  H01L27/11502 ,  H01L27/11507

CPC分类号： G11C11/221 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

摘要： Provided herein are a capacitor, a memory device including the capacitor, and a method of manufacturing the capacitor. The capacitor is manufactured by directly depositing a metal electrode having high ion mobility on an ultrathin ferroelectric layer having a certain thickness, and thus may simultaneously use metal cation migration and ferroelectric polarization inversion, and a low-power and high-performance capacitor capable of being selectively activated may be provided by simultaneously controlling an external electric field and an internal electric field caused by polarization of the inside of a ferroelectric thin film.

公开(公告)号：US11342344B2

公开(公告)日：2022-05-24

申请号：US17089286

申请日：2020-11-04

申请人： Electronics and Telecommunications Research Institute ,  University-Industry Cooperation Group of Kyung Hee University

发明人： Seungeon Moon ,  Bae Ho Park ,  Sung-Min Yoon ,  Seung Youl Kang ,  Jeong Hun Kim ,  Jiyong Woo ,  Jong Pil Im ,  Chansoo Yoon ,  Ji Hoon Jeon

IPC分类号： H01L21/00 ,  H01L27/11507 ,  H01L27/11504 ,  H01L49/02

摘要： The present disclosure relates to a memory device, and more particularly, to a memory device including a substrate, a plurality of vertical structures disposed on the substrate and including insulation layers and lower electrodes, which are alternately laminated with each other, wherein the vertical structures are aligned in a first direction parallel to a top surface of the substrate and a second direction crossing the first direction, an upper electrode disposed on a top surface and side surfaces of each of the vertical structures, and a first dielectric layer disposed between the upper electrode and the vertical structures to cover the top surface and the side surfaces of each of the vertical structures. Here, the first dielectric layer includes a ferroelectric material.