公开(公告)号：US10727121B2

公开(公告)日：2020-07-28

申请号：US16201448

申请日：2018-11-27

申请人： ELPIS TECHNOLOGIES INC.

发明人： Robert L. Bruce ,  Cyril Cabral, Jr. ,  Gregory M. Fritz ,  Eric A. Joseph ,  Michael F. Lofaro ,  Hiroyuki Miyazoe ,  Kenneth P. Rodbell ,  Ghavam Shahidi

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

摘要： The present disclosure relates to integrated circuits and to methods of manufacturing interconnects of integrated circuits. For example, an integrated circuit includes a surface of the integrated circuit and an interconnect formed on the surface and comprising a metal. An average grain size of the metal of the interconnect is greater than or equal to at least half of a line width of the interconnect. In another example, a method for manufacturing an interconnect of an integrated circuit includes depositing a layer of a metal onto a surface of the integrated circuit, annealing the metal, patterning a first hard mask for placement over the metal and forming a line of the interconnect and a first via of the interconnect by performing a timed etch of the metal using the first hard mask.