公开(公告)号：US10916468B2

公开(公告)日：2021-02-09

申请号：US15442822

申请日：2017-02-27

申请人： ELPIS TECHNOLOGIES INC.

发明人： Effendi Leobandung ,  Tenko Yamashita

IPC分类号： H01L21/74 ,  H01L21/762 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/535 ,  H01L29/06

摘要： Embodiments of the present invention provide methods for fabricating a semiconductor device with buried local interconnects. One method may include providing a semiconductor substrate with fins etched into the semiconductor substrate; forming a first set of spacers along the sides of the fins; depositing a tungsten film over the top surface of the substrate; etching the tungsten film to form a buried local interconnect; forming a set of gates and a second set of spacers; forming a source and drain region adjacent to the fins; depositing a first insulating material over the top surface of the substrate; and creating contact between the set of gates and the source and drain region using an upper buried local interconnect.

公开(公告)号：US10804107B2

公开(公告)日：2020-10-13

申请号：US16671218

申请日：2019-11-01

申请人： ELPIS TECHNOLOGIES INC.

发明人： Effendi Leobandung ,  Tenko Yamashita

IPC分类号： H01L21/225 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/10 ,  H01L29/16

摘要： A method for doping fins includes, for a first dopant layer formed in a first region and a second region to a height continuously below a top portion of a plurality of fins such that an entirety of the first dopant layer is formed below the top portion of the plurality of fins, and a dielectric layer formed over the top portion of the plurality of fins, removing the dielectric layer and the first dopant layer in the first region to expose a first fin in the first region, forming a second dopant layer over the first fin, and annealing to drive dopants into the fins from the first dopant layer in the second region and from the second dopant layer in the first region.