Method of preparing ruthenium- or iridium-containing components for resistors
    1.
    发明授权
    Method of preparing ruthenium- or iridium-containing components for resistors 失效
    制备用于电阻器的含氮元素或含有IRI的组分的方法

    公开(公告)号:US3769382A

    公开(公告)日:1973-10-30

    申请号:US3769382D

    申请日:1972-05-15

    发明人: KUO C ANGEL H

    CPC分类号: H01C17/06526

    摘要: A COMPOSITION FOR USE IN THICK FILM RESISTIVE ELEMENTS HAVING A LOW TEMPERATURE COEFFICIENT OF RESISTANCE IS PREPARED BY CODEPOSITING FROM AN AQUEOUS SOLUTION AT LEAST TWO PRECIOUS METALS ONE OF WHICH IS RUTHENIUM OR IRIDIUM ONTO LEAD-CONTAINING GLASS FRIT, OTHER METAL COMPONENTS MAY ALSO BE DEPOSITED ON THE GLASS FRIT; PREFIRING THE RESULTING GLASS FRIT AT A TEMPERATURE OF AT LEAST ABOUT 600* C., AND PREFERABLY BELOW THE MELTING POINT OF THE PRECIOUS METALS DEPOSITED THEREONF AND COMMINUTING THE PREFIRED GLASS FRIT TO A SIZE SUITABLE TO BE FORMULATED IN A RESISTOR PASTE TO PREPARE THICK FILM RESISTIVES. A PARTICULARLY ADVANTAGEOUS GLASS FRIT FOR APPLICATION IN THICK FILM RESISTIVES HAS DEPOSITED THEREON RUTHENIUM OR IRIDIUM, GOLD OR PLATINUM, AND RHODIUM. PREFERABLY, THE COMPOSITION IS ESSENTIALLY FREE OF SILVER.