INDENYL PRECURSORS
    1.
    发明公开
    INDENYL PRECURSORS 审中-公开

    公开(公告)号:US20240101582A1

    公开(公告)日:2024-03-28

    申请号:US18239661

    申请日:2023-08-29

    Applicant: ENTEGRIS, INC.

    CPC classification number: C07F7/00

    Abstract: The compounds of the present disclosure have been developed and synthesized to generate compounds that provide improvements in film applications, such as HfOx, ZrOx, and TiOx film applications. The improvements to the compounds of the present disclosure include increased molecule stability at delivery temperature and deposition temperature, improvements related to precursor film impurity levels, molecule volatility, molecule melting point, and step coverage.

    PRECURSORS CONTAINING FLUORINATED ALKOXIDES AND AMIDES

    公开(公告)号:US20240092816A1

    公开(公告)日:2024-03-21

    申请号:US18240873

    申请日:2023-08-31

    Applicant: ENTEGRIS, INC.

    CPC classification number: C07F17/00 C07F7/003 C07F7/28

    Abstract: The present disclosure relates to the field of precursors, more specifically precursors containing at least one fluorinated group. In some embodiments, the precursors are hafnium, zirconium, and titanium bis(cyclopentadienyl) precursors containing fluorinated alkoxides and amides. In some embodiments, the present disclosure relates to using precursors for deposition of group 4 containing thin films, such as HfOx, ZrOx, and TiOx film applications. These thin films can be used in a variety of applications including semiconductor device structures. The compounds of the present disclosure have been developed and synthesized to generate compounds that provide improvements in film applications, such as HfOx, ZrOx, and TiOx film applications. The improvements to the compounds of the present disclosure include increased molecule stability at delivery temperature and deposition temperature, improvements related to precursor film impurity levels, molecule volatility, molecule melting point, and step coverage.

    TIN AMIDE COMPOUNDS AND RELATED COMPOSITIONS AND METHODS

    公开(公告)号:US20250051372A1

    公开(公告)日:2025-02-13

    申请号:US18785117

    申请日:2024-07-26

    Applicant: ENTEGRIS, INC.

    Abstract: Methods are provided. A method comprises contacting a tin (IV) compound with a reagent to form at least one reaction product. The regent comprises at least one of a metal alkoxide compound, a metal amide compound, or any combination thereof. The at least one reaction product comprises at least one of a substituted tin (IV) amide compound, a substituted tin (IV) alkoxide compound, or any combination thereof. Various compositions and various compounds, among other things, are also provided.

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