公开(公告)号：US20250019590A1

公开(公告)日：2025-01-16

申请号：US18806681

申请日：2024-08-15

Applicant: ENTEGRIS, INC.

Inventor： Eric Hong ,  SeongJin Hong ,  WonLae Kim ,  JeongYeol Yang ,  SeungHyun Chae ,  JuHee Yeo

IPC: C09K13/08 ,  H01L21/306

Abstract: Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns.

公开(公告)号：US12152187B2

公开(公告)日：2024-11-26

申请号：US17402126

申请日：2021-08-13

Applicant: ENTEGRIS, INC.

Inventor： Eric Hong ,  SeongJin Hong ,  WonLae Kim ,  JeongYeol Yang ,  SeungHyun Chae ,  JuHee Yeo

IPC: C09K13/08 ,  H01L21/306

Abstract: Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns.