公开(公告)号：US20240412981A1

公开(公告)日：2024-12-12

申请号：US18737743

申请日：2024-06-07

Applicant: ENTEGRIS, INC.

Inventor： Phil S.H. Chen ,  Bryan C. Hendrix ,  Eric Condo

IPC: H01L21/3205 ,  C23C16/04 ,  C23C16/06 ,  C23C16/448 ,  H01L23/532

Abstract: Selective ruthenium deposition and related systems and methods are provided. A method comprises vaporizing at least a portion of a ruthenium precursor to produce a vaporized ruthenium precursor; contacting a first surface portion and a second surface portion of a substrate with the vaporized ruthenium precursor and at least one reducing gas; and depositing ruthenium on the first surface portion of the substrate with a selectivity of at least 25 Å relative to the second surface portion of the substrate. A device comprises a substrate having a first surface portion and a second surface portion adjacent to the first surface portion; and a ruthenium layer located on the first surface portion of the substrate, wherein the ruthenium layer has a thickness of at least 25 Å on the first surface portion of the substrate; wherein the second surface portion of the substrate does not comprise ruthenium.