公开(公告)号：US20220356563A1

公开(公告)日：2022-11-10

申请号：US17738352

申请日：2022-05-06

Applicant: ENTEGRIS, INC.

Inventor： Robert L. Wright, JR.

IPC: C23C16/06 ,  C23C16/455

Abstract: Provided is a process for the rapid deposition of highly conformal molybdenum- or tungsten-containing films onto microelectronic device substrates under vapor deposition conditions. In the practice of the invention, a first nucleation step is conducted, while utilizing a generally lower concentration of metal precursor than would ordinarily be utilized in the reaction zone. This utilization of lower metal precursor concentrations can be achieved by way of regulating the temperature of the ampoule (housing the precursor), the concentration of the precursor, pressure in the reaction zone, and the duration of the pulse. In this fashion, a generally lower concentration is utilized to form a nucleation layer of greater than or equal to about 3 Å, or up to about 9, 15, or 25 Å, at which time, the conditions for introducing the precursor are advantageously changed and the concentration of the precursor in the reaction zone is increased for the purpose of bulk deposition.

公开(公告)号：US20240190718A1

公开(公告)日：2024-06-13

申请号：US18533684

申请日：2023-12-08

Applicant: ENTEGRIS, INC.

Inventor： Loren Press ,  Michael Watson ,  Benjamin R. Garrett ,  Bryan Clark Hendrix ,  Cristian Ocampo ,  Juan Valdez ,  Robert L. Wright, JR.

IPC: C01G39/04

CPC classification number: C01G39/04

Abstract: Molybdenum precursors with high purity and methods for purifying molybdenum precursors are provided. A method comprises obtaining a first vessel comprising a solid reagent; vaporizing at least a portion of the solid reagent to produce a vapor comprising a MoCl5 vapor and a molybdenum impurity vapor; flowing at least a portion of the MoCl5 vapor and at least a portion of the molybdenum impurity vapor to a second vessel; condensing at least a portion of the MoCl5 vapor in the second vessel to separate the MoCl5 from the molybdenum impurity; and removing at least a portion of the molybdenum impurity vapor from the second vessel to obtain a MoCl5 precursor.

公开(公告)号：US20240140819A1

公开(公告)日：2024-05-02

申请号：US18404334

申请日：2024-01-04

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Robert L. Wright, JR. ,  Thomas H. Baum ,  Bryan C. Hendrix

IPC: C01G39/04 ,  C01G41/04

CPC classification number: C01G39/04 ,  C01G41/04 ,  C01P2002/72

Abstract: The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.