公开(公告)号：US20250079157A1

公开(公告)日：2025-03-06

申请号：US18819915

申请日：2024-08-29

Applicant: ENTEGRIS, INC.

Inventor： Rong Zhao ,  Eric Condo ,  Bryan C. Hendrix ,  Lucas B. Henderson ,  Philip S.H. Chen

IPC: H01L21/02

Abstract: Methods improving metal oxide deposition with nitrogen oxide, related devices, and related systems are provided herein. The method comprises flowing an ozone gas from an ozone generator to a deposition chamber. The method comprises flowing a nitrogen oxide gas from a first source to the deposition chamber. The method comprises flowing a first precursor gas from a second source to the deposition chamber. The method comprises exposing a substrate located in the deposition chamber to at least one of the ozone gas, the nitrogen oxide gas, the first precursor gas, or any combination thereof. The method step of exposing is sufficient to form a film having a step coverage of at least 50%. The substrate has at least one structure with an aspect ratio of at least 10:1.