公开(公告)号：US20170373064A1

公开(公告)日：2017-12-28

申请号：US15632391

申请日：2017-06-26

申请人： National Applied Research Laboratories ,  EPISTAR Corporation

发明人： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L27/0924 ,  H01L21/823821 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/66795 ,  H01L29/7853

摘要： A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.

公开(公告)号：US20200303377A1

公开(公告)日：2020-09-24

申请号：US16893348

申请日：2020-06-04

申请人： National Applied Research Laboratories ,  EPISTAR Corporation

发明人： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/16 ,  H01L29/20

摘要： A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

公开(公告)号：US11515307B2

公开(公告)日：2022-11-29

申请号：US16893348

申请日：2020-06-04

申请人： National Applied Research Laboratories ,  EPISTAR Corporation

发明人： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L29/16 ,  H01L29/20 ,  H01L29/161

摘要： A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

公开(公告)号：US10727231B2

公开(公告)日：2020-07-28

申请号：US16159541

申请日：2018-10-12

申请人： National Applied Research Laboratories ,  EPISTAR Corporation

发明人： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC分类号： H01L29/16 ,  H01L29/20 ,  H01L29/161 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238

摘要： A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.

公开(公告)号：US20190043862A1

公开(公告)日：2019-02-07

申请号：US16159541

申请日：2018-10-12

申请人： National Applied Research Laboratories ,  EPISTAR Corporation

发明人： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC分类号： H01L27/092 ,  H01L29/16 ,  H01L21/8238 ,  H01L29/20 ,  H01L29/161

CPC分类号： H01L27/0924 ,  H01L21/823821 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/66795 ,  H01L29/7853

摘要： A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.

公开(公告)号：US11049961B2

公开(公告)日：2021-06-29

申请号：US16453118

申请日：2019-06-26

申请人： EPISTAR CORPORATION

发明人： Shang-Ju Tu ,  Chia-Cheng Liu ,  Tsung-Cheng Chang ,  Ya-Yu Yang ,  Yu-Jiun Shen ,  Jen-Inn Chyi

IPC分类号： H01L29/778 ,  H01L29/417 ,  H01L29/66

摘要： A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.

公开(公告)号：US10134735B2

公开(公告)日：2018-11-20

申请号：US15632391

申请日：2017-06-26

申请人： National Applied Research Laboratories ,  EPISTAR Corporation

发明人： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC分类号： H01L27/092 ,  H01L29/20 ,  H01L29/16 ,  H01L21/8238

摘要： A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.