公开(公告)号：US20250056930A1

公开(公告)日：2025-02-13

申请号：US18799505

申请日：2024-08-09

Applicant: EPISTAR CORPORATION

Inventor： Tzu Yun Feng ,  Wei Shan Yeoh ,  Yao-Ning Chan ,  June Kuo

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/44 ,  H01L33/50 ,  H01L33/52 ,  H01L33/62 ,  H01L33/64

Abstract: A semiconductor device includes a semiconductor stack, an insulating structure, a metal oxide structure and a metal structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active structure located between the first semiconductor structure and the second semiconductor structure. The insulating structure is disposed below the first semiconductor structure and comprising a first opening and a second opening. The metal oxide structure is disposed below the insulating structure and located in the first opening, and contacts the semiconductor stack to form a first contact surface therebetween. The metal structure is located in the second opening, and contacts the semiconductor stack to form a second contact surface therebetween. The first contact surface is separated from the second contact surface.

公开(公告)号：US12166156B2

公开(公告)日：2024-12-10

申请号：US18401106

申请日：2023-12-29

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Tsung-Hsun Chiang ,  Bo-Jiun Hu ,  Wen-Hung Chuang ,  Yu-Ling Lin

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/02 ,  H01L33/08 ,  H01L33/10 ,  H01L33/22 ,  H01L33/24 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

公开(公告)号：US12163630B2

公开(公告)日：2024-12-10

申请号：US18396394

申请日：2023-12-26

Applicant: EPISTAR CORPORATION

Inventor： Wei-Chiang Hu ,  Keng-Chuan Chang ,  Chiu-Lin Yao ,  Chun-Wei Lin ,  Jung-Chang Sun

IPC: F21K9/23 ,  F21K9/00 ,  F21V19/00 ,  F21Y105/10 ,  F21Y115/10

Abstract: A light-emitting unit, having a substrate; a first light-emitting body formed on the substrate, and having a first longer side and a first shorter side; a second light-emitting body formed on the substrate, and having a second longer side and a second shorter side which is parallel to the first longer side; a third light-emitting body formed on the substrate, having a third longer side and a third shorter side which is parallel to the first longer side, and electrically connected to the first light-emitting body and the second light-emitting body; a first electrode covering the first light-emitting body and the second light-emitting body, and electrically connecting to the first light-emitting body; a second electrode separated from the first electrode, and covering the second light-emitting body without covering the first light-emitting body; and a transparent element enclosing the first light-emitting body, the second light-emitting body, and the third light-emitting body.

公开(公告)号：US20240405169A1

公开(公告)日：2024-12-05

申请号：US18675532

申请日：2024-05-28

Applicant: EPISTAR CORPORATION

Inventor： Chong-Yu WANG ,  Wei-Shan HU ,  Ching-Tai CHENG ,  Chien-Chih CHEN ,  Min-Hsun HSIEH

IPC: H01L33/50 ,  H01L25/16

Abstract: A wavelength conversion unit arrangement includes a carrier and a wavelength conversion unit. The wavelength conversion unit includes a wavelength conversion layer and a filter layer, and the filter layer attaches the wavelength conversion unit to the carrier. The filter layer has a first surface facing the carrier and a second surface opposite the first surface, and the first surface and the second surface have different textures.

公开(公告)号：US12125943B2

公开(公告)日：2024-10-22

申请号：US18505348

申请日：2023-11-09

Applicant: EPISTAR CORPORATION

Inventor： Huan-Yu Lai ,  Li-Chi Peng

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L33/0062 ,  H01L33/04 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/305 ,  H01L33/32 ,  H01L33/325

Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer. The first nitride semiconductor layer includes a first indium content, a first aluminum content and a first conductivity-type dopant. The second nitride semiconductor layer includes a second indium content, a second aluminum content and a second conductivity-type dopant. The electron blocking structure includes a first semiconductor layer including a third indium content and a third aluminum content; wherein the third indium content is greater than the second indium content.

公开(公告)号：US20240339564A1

公开(公告)日：2024-10-10

申请号：US18625617

申请日：2024-04-03

Applicant: EPISTAR CORPORATION

Inventor： Wei-Che WU ,  Chih-Hao CHEN ,  Yu-Ling LIN ,  Chao-Hsing CHEN ,  Yong-Yang CHEN

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/60

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/60

Abstract: A semiconductor device includes a semiconductor stack; a substrate formed on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface, and a side surface between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first scribing area, and a first crack area, the mirror area is closer to the lower surface than the first scribing area to the lower surface, and the first scribing area is located between the mirror area and the first crack area; an optical structure on the upper surface of the substrate; and a reflective structure on a side surface of the first scribing area and the first crack area, wherein the first scribing area is arranged below the upper surface of the substrate with a distance less than or equal to ¼ of a thickness of the substrate.

公开(公告)号：US20240339345A1

公开(公告)日：2024-10-10

申请号：US18749201

申请日：2024-06-20

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  De-Shan KUO ,  Chang-Lin LEE ,  Jhih-Yong YANG

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/683 ,  H01L33/00

CPC classification number: H01L21/67721 ,  H01L21/67144 ,  H01L21/67288 ,  H01L21/6773 ,  H01L21/6836 ,  H01L33/0075 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68368

Abstract: A chip transferring method includes steps of: providing a plurality of chips on a first load-bearing structure; measuring photoelectric characteristic values of the plurality of chips; categorizing the plurality of chips into a first portion of the plurality of chips and a second portion of the plurality of chips according to the photoelectric characteristic values of the plurality of chips, wherein the second portion of the plurality of chips comprise parts of the plurality of chips which photoelectric characteristic value falls within an unqualified range; removing the second portion of the plurality of chips from the first load-bearing structure; dividing the first portion of the plurality of chips into a plurality of blocks, wherein each of the plurality of blocks comprising multiple chips of the first portion of the plurality of chips; and transferring the first portion of the plurality of chips in one of the plurality of blocks to a second load-bearing structure in single-batch.

公开(公告)号：US12107080B2

公开(公告)日：2024-10-01

申请号：US18070669

申请日：2022-11-29

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun Hsieh ,  Tzu-Hsiang Wang

IPC: H01L29/20 ,  H01L23/00 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L24/32 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/32227 ,  H01L2224/83192 ,  H01L2224/83851

Abstract: The application discloses a light-emitting device including a carrier which includes an insulating layer, an upper conductive layer formed on the insulating layer, a plurality of conducting vias passing through the insulating layer, and a lower conductive layer formed under the insulating layer; four light-emitting elements arranged in rows and columns flipped on the carrier; and a light-passing unit formed on the carrier and covering the four light-emitting elements; wherein each of the light-emitting elements including a first light-emitting bare die emitting a first dominant wavelength, a second light-emitting bare die emitting a second dominant wavelength, and a third light-emitting bare die emitting a third dominant wavelength; and wherein two adjacent first light-emitting bare die in a row has a first distance W1, two adjacent first light-emitting bare die in a column has a second distance W2, and W1 is the same as W2.

公开(公告)号：US12100793B2

公开(公告)日：2024-09-24

申请号：US18175381

申请日：2023-02-27

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun Hsieh ,  Shau-Yi Chen ,  Shao-You Deng

IPC: H01L33/62 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L2933/0066

Abstract: A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. An edge of the upper portion is protruded beyond the neck portion, and an edge of the lower portion is protruded beyond the upper portion.

公开(公告)号：US20240313146A1

公开(公告)日：2024-09-19

申请号：US18669153

申请日：2024-05-20

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Jen-Chieh YU ,  Chun-Wei CHEN

IPC: H01L31/147 ,  G09G3/32 ,  H05B45/12

CPC classification number: H01L31/147 ,  G09G3/32 ,  H05B45/12 ,  G09G2320/0626

Abstract: The present disclosure provides a light-emitting module and a display apparatus thereof. The light-emitting module includes a circuit substrate which includes a first surface and a second surface opposite to the first surface. The first surface includes a plurality of conductive channels, and the second surface includes a plurality of conductive pads. A plurality of light-emitting groups is arranged in a matrix on the first surface. Each of the light-emitting groups includes a red light-emitting diode chip, a green light-emitting diode chip, and a blue light-emitting diode chip. An electric component is disposed on the first surface and located in the light-emitting groups matrix. A translucent encapsulating component covers the plurality of light-emitting groups and the electric component. The light-emitting groups matrix comprises m columns and n rows.