公开(公告)号：US4661175A

公开(公告)日：1987-04-28

申请号：US741744

申请日：1985-06-06

申请人： Eckart Kuphal ,  Herbert Burkhard

发明人： Eckart Kuphal ,  Herbert Burkhard

IPC分类号： H01L33/00 ,  H01S5/00 ,  H01S5/323 ,  H01L21/208

CPC分类号： H01L33/0062 ,  H01L33/0025 ,  H01S5/3235 ,  H01S5/32391

摘要： A method is provided for manufacturing a double hetero-structure of InGaAsP/InP, or, alternatively of InGaAs/InP, for use in lasers and LEDs by means of liquid phase epitaxy. The resulting structures emit optical radiation up to a wavelength of about 1.7 .mu.m. As a result of growing the InP cover layer from an Sn-In-P solution, the meltback of the active layer at gap wavelengths .gtoreq.1.5 .mu.m is avoided, and, thus, no anti-meltback layer is needed. By employing an inverted format for the layer structure with respect to the doping of a starting p-InP substrate, the necessarily highly n-doped InP cover layer has the correct conductivity type. The so-produced double hetero-structures are composed of only three epitaxial layers.

摘要翻译： 提供了一种通过液相外延制造InGaAsP / InP的双异质结构或InGaAs / InP的另一种用于激光器和LED的方法。 所得结构发射高达约1.7μm波长的光辐射。 通过从Sn-In-P溶液中生长InP覆盖层的结果，避免了间隙波长>1.5μm的有源层的回熔，因此不需要抗反熔层。 通过采用相对于起始p-InP衬底的掺杂的层结构的反向格式，必然高度n掺杂的InP覆盖层具有正确的导电类型。 所产生的双异质结构仅由三个外延层组成。