公开(公告)号：US20170098920A1

公开(公告)日：2017-04-06

申请号：US15383555

申请日：2016-12-19

申请人： Acacia Communications, Inc.

发明人： Christopher Doerr

IPC分类号： H01S5/062 ,  H01S5/0687 ,  H01S5/50 ,  H01S5/323 ,  H01S5/0683 ,  H01S5/10

CPC分类号： H01S5/06246 ,  H01S3/10015 ,  H01S5/0261 ,  H01S5/0683 ,  H01S5/0687 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1025 ,  H01S5/1032 ,  H01S5/3224 ,  H01S5/3235 ,  H01S5/32391 ,  H01S5/4062 ,  H01S5/50

摘要： A tunable laser that includes an array of parallel optical amplifiers is described. The laser may also include an intracavity N×M coupler that couples power between a cavity mirror and the array of parallel optical amplifiers. Phase adjusters in optical paths between the N×M coupler and the optical amplifiers can be used to adjust an amount of power output from M-1 ports of the N×M coupler. A tunable wavelength filter is incorporated in the laser cavity to select a lasing wavelength.

公开(公告)号：US06707834B2

公开(公告)日：2004-03-16

申请号：US10179012

申请日：2002-06-26

申请人： Hiroyuki Hosoba ,  Yasuo Kan

发明人： Hiroyuki Hosoba ,  Yasuo Kan

IPC分类号： H01S500

CPC分类号： H01S5/0421 ,  H01S5/2231 ,  H01S5/2275 ,  H01S5/321 ,  H01S5/32391

摘要： In a semiconductor laser element, an active layer is sandwiched between first-conductivity type and second-conductivity type cladding layers, and a second-conductivity type contact layer is disposed above the second cladding layer with an intermediate bandgap layer interposed between the second cladding layer and the contact layer, the second-conductivity type contact layer having a bandgap different from a bandgap of the second-conductivity type cladding layer, the intermediate bandgap layer having an intermediate bandgap between the bandgaps of the second-conductivity type cladding layer and the second-conductivity type contact layer. The second-conductivity type contact layer has at least a first contact layer, an intermediate second contact layer and a third contact layer stacked in this order and the second contact layer has an impurity density lower than impurity densities of the first and third contact layers.

摘要翻译： 在半导体激光元件中，有源层夹在第一导电型和第二导电型包覆层之间，第二导电型接触层设置在第二覆层的上方，中间带隙层介于第二覆层 所述接触层，所述第二导电型接触层具有与所述第二导电型包覆层的带隙不同的带隙，所述中间带隙层在所述第二导电型包覆层的带隙与所述第二导电型包覆层的带隙之间具有中间带隙 导电型接触层。 第二导电型接触层具有至少第一接触层，中间第二接触层和第三接触层，并且第二接触层的杂质密度低于第一和第三接触层的杂质浓度。

公开(公告)号：US6127201A

公开(公告)日：2000-10-03

申请号：US270314

申请日：1999-03-16

申请人： Toyoji Chino ,  Yasuhito Kumabuchi ,  Isao Kidoguchi ,  Hideto Adachi

发明人： Toyoji Chino ,  Yasuhito Kumabuchi ,  Isao Kidoguchi ,  Hideto Adachi

IPC分类号： H01L21/306 ,  H01L21/473 ,  H01S5/10 ,  H01S5/20 ,  H01S5/223 ,  H01S5/227 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01L21/473 ,  H01L21/30621 ,  H01S5/227 ,  H01S5/1064 ,  H01S5/209 ,  H01S5/2231 ,  H01S5/2275 ,  H01S5/32325 ,  H01S5/32391 ,  Y10S438/935

摘要： An etching method for performing dry-etching on a III-V group compound semiconductor or a II-VI group compound semiconductor in a dry-etching apparatus comprising a plasma source for creating a plasma of density of about 10.sup.10 cm.sup.-3 or greater, using a mixed gas containing a gas including a halogen element and a gas including nitrogen. The etching conditions are as follows: (a flow rate of the gas containing said halogen gas)/(a flow rate of said nitrogen gas).gtoreq.1; and an internal pressure during etching reaction is about 1 mTorr or greater.

摘要翻译： 一种用于在干蚀刻装置中对III-V族化合物半导体或II-VI族化合物半导体进行干蚀刻的蚀刻方法，该干蚀刻装置包括用于产生密度为约1010cm -3或更大的等离子体的等离子体源，其使用 含有包含卤素元素的气体和包含氮气的混合气体。 蚀刻条件如下：（含有卤素气体的气体的流量）/（所述氮气的流量）> = 1; 并且蚀刻反应期间的内部压力为约1mTorr或更大。

公开(公告)号：US6088378A

公开(公告)日：2000-07-11

申请号：US67003

申请日：1998-04-27

申请人： Yukio Furukawa

发明人： Yukio Furukawa

IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/18 ,  H01S5/183 ,  H01S5/323 ,  H01S3/08

CPC分类号： H01S5/18352 ,  H01S5/1071 ,  H01S2301/176 ,  H01S5/0207 ,  H01S5/02476 ,  H01S5/18305 ,  H01S5/18316 ,  H01S5/3202 ,  H01S5/32391

摘要： A surface emitting semiconductor laser of a ring cavity type with a small cavity loss includes a ring cavity or resonator which is constructed wituout using at least one of a pair of special high-reflection multi-layer mirrors and formed in a plane approximately perpendicular to its substrate. The ring cavity is built by a parallel face parallel to the substrate and at least one total reflection face formed opposed to the parallel face. The total reflection face may be a mesa-shaped semiconductor face, a polygonal cone-shaped semiconductor face, a quadrangular cone-shaped semiconductor, a circular cone-shaped semiconductor face or the like.

摘要翻译： 具有小腔损耗的环腔型的表面发射半导体激光器包括环形腔或谐振器，其被构造为使用一对特殊的高反射多层反射镜中的至少一个并且形成在大致垂直于其的平面中 基质。 环形空腔由平行于基板的平行面构成，并且与平行面相对地形成至少一个全反射面。 全反射面可以是台面状半导体面，多边形锥形半导体面，四边形锥形半导体，圆锥形半导体面等。

公开(公告)号：US5814534A

公开(公告)日：1998-09-29

申请号：US510695

申请日：1995-08-03

申请人： Tatsuya Kimura ,  Takao Ishida

发明人： Tatsuya Kimura ,  Takao Ishida

IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L33/30 ,  H01S5/30 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01L33/305 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02658 ,  H01S5/3235 ,  H01S2304/04 ,  H01S5/3054 ,  H01S5/32391

摘要： In a method for doping with beryllium, when epitaxially growing a III-V compound semiconductor, (MeCP).sub.2 Be is employed as a dopant source. Since (MeCP).sub.2 Be has a lower vapor pressure than diethylberyllium (DEBe) which is conventionally employed as the dopant source doping control is facilitated. In addition, since (MeCP).sub.2 Be having a higher purity than DEBe is easily obtained, impurities such as oxygen are not incorporated into the active layer during doping, whereby a high quality p type layer is realized.

摘要翻译： 在掺杂铍的方法中，当外延生长III-V族化合物半导体时，使用（MeCP）2Be作为掺杂剂源。 由于（MeCP）2Be具有比二乙基苯（DEBe）低的蒸汽压，因此通常用作掺杂剂源掺杂控制。 此外，由于容易获得比DEBe高的纯度（MeCP）2Be，因此在掺杂期间不会在有源层中引入氧等杂质，能够实现高质量的p型层。

公开(公告)号：US5785755A

公开(公告)日：1998-07-28

申请号：US616351

申请日：1996-03-15

申请人： Takahiro Nakamura ,  Satoshi Ae

发明人： Takahiro Nakamura ,  Satoshi Ae

IPC分类号： C23C16/18 ,  C30B25/02 ,  C30B25/14 ,  H01L21/205 ,  H01S5/00 ,  H01S5/323

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/40 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01S2304/04 ,  H01S5/32391

摘要： Disclosed are methods of preparing multilayer structures with InGaAsP layers of different compositions by metal organic vapor phase epitaxy, which result in formation of sharp heterointerfaces. After an InGaAsP well layer has been grown, the process is kept on standby with a flow of AsH.sub.3 and PH.sub.3, which are sources comprising elements of group V, at the well's composition ratios, and then with a flow of a source comprising an element of group V, including TBP (TBP/standby step), and an InGaAsP barrier layer is grown which has a smaller arsenic content than the well layer. TBP has a decomposition temperature approximately 100.degree. C. lower than PH.sub.3, and thus provides a phosphorus pressure which is five times or more as high as that of PH.sub.3 at identical growth temperatures and at identical V/III ratios. Therefore, during the process of growth of multilayer InGaAsP films, TBP may be used in a standby step with a flow of a source comprising an element of group V at the same composition ratio as is designed for an InGaAsP layer which has a smaller arsenic content than the previously grown layer and is subsequently grown, to prevent arsenic desorption from chamber walls and group V species desorption from the exposed interfaces, thus realizing sharp heterointerfaces.

摘要翻译： 公开了通过金属有机气相外延制备具有不同组成的InGaAsP层的多层结构的方法，其导致形成尖锐的异质界面。 在已经生长了InGaAsP阱层之后，该工艺被保持在备用状态，其中AsH 3和PH 3流是以阱的组成比包含V族的元素的源，然后是源的流，该源包括 组V，包括TBP（TBP /备用步骤）和生长具有比阱层更小的砷含量的InGaAsP势垒层。 TBP具有比PH3低约100℃的分解温度，因此在相同的生长温度和相同的V / III比下提供磷压力是PH3的五倍或更多的磷压。 因此，在多层InGaAsP膜的生长过程中，TBP可以在备用步骤中使用，其流动源包括与针对具有较小砷含量的InGaAsP层设计的相同组成比的V族元素 比之前生长的层并且随后生长，以防止从室壁的砷解吸和组V物质从暴露的界面解吸，从而实现尖锐的异质界面。

公开(公告)号：US5509026A

公开(公告)日：1996-04-16

申请号：US384333

申请日：1995-02-01

申请人： Yoshihiro Sasaki ,  Takao Morimoto

发明人： Yoshihiro Sasaki ,  Takao Morimoto

IPC分类号： H01S5/00 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/3434 ,  H01S5/32391 ,  H01S5/3415 ,  H01S5/3428 ,  H01S5/34306

摘要： Disclosed herein is a long wavelength multiple quantum well semiconductor laser which is capable of preventing the nonuniform injection of carriers into quantum wells, and the overflow of the electrons within the quantum wells, and which is also capable of suppressing the increase in the threshold caused by insufficient gain, and the increase in the threshold and the deterioration in the slope efficiency caused by internal absorption loss. In a multiple quantum well semiconductor laser which has an InGaAsP optical waveguide layer provided respective on the inside of a p-InP clad layer and an n-InP clad layer, and InGaAsP barrier layers and strained InGaAsP quantum well layers provided between the InP clad layers, the semiconductor laser according to this invention has the energy difference between the first quantum level of the hole in the quantum well and the top of the valence band in the barrier layer to be less than or equal to 160 meV, the energy difference between the first quantum level of the electron in the quantum well and the bottom of the conduction band in the barrier layer to be more than or equal to 30 meV, and the optical confinement factor to the quantum layer lying in the range from 0.01 to 0.07.

摘要翻译： 本文公开了一种长波长多量子阱半导体激光器，其能够防止载流子不均匀地注入量子阱以及量子阱内的电子溢出，并且还能够抑制阈值引起的阈值增加 增益不足，阈值增加和内部吸收损失引起的斜率效率的恶化。 在具有分别设置在p-InP包层和n-InP覆盖层的内部的InGaAsP光波导层的多量子阱半导体激光器中，以及设置在InP覆盖层之间的InGaAsP阻挡层和应变的InGaAsP量子阱层 ，根据本发明的半导体激光器具有量子阱中的空穴的第一量子级与势垒层中的价带顶部之间的能量差小于或等于160meV， 量子阱中的电子的第一量子水平和势垒层中的导带的底部大于或等于30meV，并且量子层的光限制因子在0.01至0.07的范围内。

公开(公告)号：US5506859A

公开(公告)日：1996-04-09

申请号：US389665

申请日：1995-02-16

申请人： David A. Ackerman ,  Leonard J. Ketelsen

发明人： David A. Ackerman ,  Leonard J. Ketelsen

IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/323 ,  H01S3/08

CPC分类号： H01S5/1228 ,  H01S5/32391

摘要： A DFB laser with improved loss grating is disclosed. The grating contains periodically patterned first and second semiconductor layers that are embedded in semiconductor material of composition selected to provide relatively low loss for the laser radiation. The composition of the first layer is selected to provide a relatively high refractive index and loss for the laser radiation, and the composition of the second layer is selected to provide relatively low refractive index and loss for the laser radiation. The thicknesses of the first and second layers are selected such that the real part of the coupling constant .vertline..kappa.'.vertline. is less than the imaginary part of the coupling constant .vertline..kappa.".vertline.. In preferred embodiments .vertline..kappa.'.vertline..ltoreq.0.5.vertline..kappa.".vertline., even.ltoreq.0.2.vertline..kappa.".vertline..

摘要翻译： 公开了一种具有改进的损耗光栅的DFB激光器。 光栅包含周期性图案化的第一和第二半导体层，其被嵌入被选择为为激光辐射提供相对低的损耗的组成的半导体材料中。 选择第一层的组成以为激光辐射提供相对高的折射率和损耗，并且选择第二层的组成以为激光辐射提供相对低的折射率和损耗。 选择第一层和第二层的厚度，使得耦合常数|的实部 kappa'| 小于耦合常数|的虚部 kappa''|。 在优选实施例中 kappa'|

公开(公告)号：US5470785A

公开(公告)日：1995-11-28

申请号：US133507

申请日：1993-10-07

申请人： Yasuhiro Kondo

发明人： Yasuhiro Kondo

IPC分类号： H01L33/30 ,  H01S5/22 ,  H01S5/227 ,  H01S5/30 ,  H01S5/323 ,  H01L21/20 ,  H01L21/203

CPC分类号： H01L33/305 ,  H01S5/227 ,  H01S5/2206 ,  H01S5/2275 ,  H01S5/305 ,  H01S5/32391

摘要： According to a method of manufacturing a buried heterostructure semiconductor laser, an active layer and a p-type cladding layer are sequentially deposited on an n-type group III-V semiconductor substrate by metalorganic vapor phase epitaxy. A surface of the deposited layer is masked in a stripe shape, and the cladding layer, the active layer, and the semiconductor substrate are selectively and partially etched to form a mesa structure. A p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5.times.10.sup.18 atoms.multidot.cm.sup.-3, a p-type cladding layer, and a p-type cap layer are sequentially deposited on an entire upper surface of the mesa structure by the metalorganic vapor phase epitaxy.

摘要翻译： 根据制造掩埋异质结构半导体激光器的方法，通过金属有机气相外延在n型III-V族半导体衬底上依次沉积有源层和p型覆层。 沉积层的表面被掩模成条形，并且包层，有源层和半导体衬底被选择性地和部分蚀刻以形成台面结构。 p型电流阻挡层，含有浓度不小于5×1018 atoms×cm-3的Ⅵ族掺杂剂的n型电流限制层，p型包覆层和p型覆盖层依次沉积在 通过金属有机气相外延的台面结构的整个上表面。

公开(公告)号：US5410178A

公开(公告)日：1995-04-25

申请号：US293903

申请日：1994-08-22

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H01B1/02 ,  H01L31/18 ,  H01L33/00 ,  H01L33/30 ,  H01S5/323 ,  H01L29/161

CPC分类号： H01L33/30 ,  H01B1/02 ,  H01L31/1844 ,  H01L33/0062 ,  H01S5/3235 ,  H01S5/32391 ,  Y02E10/544

摘要： Semiconductor films of the formula (InP).sub.1-x (TlP.sub.3).sub.x on InP substrates which cover the bandgap of 2-12 .mu.m for use with long wavelength infrared detector and laser applications are disclosed.

摘要翻译： 公开了用于长波长红外检测器和激光应用的覆盖2-12μm的带隙的InP衬底上的式（InP）1-x（TlP3）x的半导体膜。