公开(公告)号：US20050023552A1

公开(公告)日：2005-02-03

申请号：US10699839

申请日：2003-11-04

申请人： Edward Chang ,  Guangli Luo ,  Tsung Yang ,  Chung Chang

发明人： Edward Chang ,  Guangli Luo ,  Tsung Yang ,  Chung Chang

IPC分类号： H01L21/20 ,  H01L33/00

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02546 ,  H01L33/0066

摘要： This invention provides a process for growing Ge epitaixial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaixial layers by using metal organic chemical vapor deposition (MOCVD). The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaixial layer, such as Si0.1Ge0.9 in a thickness of 0.8 μm on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of Si0.1Ge0.9 due to the large mismatch between this layer and Si substrate. Furthermore, a subsequent 0.8 μm Si0.05Ge0.95 layer, and/or optionally a further 0.8 μm Si0.02Ge0.98 layer, are grown. They form strained interfaces of said layers can bend and terminate the propagated upward dislocation very effectively. Therefore, a film of pure Ge is grown on the surface of said epitaixial layers. Finally, a GaAs epitaixial layer is grown on said Ge film by using MOCVD.

摘要翻译： 本发明提供了一种通过使用超高真空化学气相沉积（UHVCVD）在Si衬底上生长Ge表面层的方法，随后通过使用金属有机化学气相沉积在所述Ge附着层的表面的Ge膜上生长GaAs层 （MOCVD）。 该方法包括以下步骤：首先，在标准清洁程序中预清洁硅晶片，用HF溶液浸渍并预烘烤以除去其天然氧化物层。 然后，通过在特定条件下使用超高真空化学气相沉积，在所述Si衬底上生长厚度为0.8μm的高Ge组成的表层，例如Si0.1Ge0.9。 因此，由于该层和Si衬底之间的大的失配，在Si0.1Ge0.9的界面附近和部分低处产生并位于许多位错。 此外，生长随后的0.8μm的Si0.05Ge0.95层和/或任选的另外的0.8μm的SiO 0.02 Ga 0.98层。 它们形成所述层的应变界面可以非常有效地弯曲和终止传播的向上错位。 因此，在所述附着层的表面上生长纯Ge的膜。 最后，通过使用MOCVD在所述Ge膜上生长GaAs外延层。