BROADBAND SEMICONDUCTOR FARADAY EFFECT DEVICES IN THE INFRARED
    1.
    发明申请
    BROADBAND SEMICONDUCTOR FARADAY EFFECT DEVICES IN THE INFRARED 审中-公开
    红外线半导体半导体激光器效应器件

    公开(公告)号:US20140139911A1

    公开(公告)日:2014-05-22

    申请号:US14073616

    申请日:2013-11-06

    Inventor: Amir A. Jalali

    CPC classification number: G02F1/093 G02F1/0036 G02F2001/0152 G02F2203/11

    Abstract: A Faraday rotator is formed of a class of semiconductor materials of low free carrier density wherein, in the presence of a suitable magnetic field, interband transition Faraday rotation is opposite in sign from free carrier effect Faraday rotation and interband transition Faraday rotation predominates over free carrier effect Faraday rotation such that net Faraday rotation can remain nearly unchanged over broad IR spectral regions where the short wavelength limit is typically near the bandgap absorption. Thus, the class of semiconductors meeting these conditions can function as high performance broadband optical isolators in the infrared. Suitable materials include InAs of suitable purity.

    Abstract translation: 法拉第旋转器由一类低自由载流子密度的半导体材料形成,其中在存在合适的磁场的情况下,带间跃迁法拉第旋转与自由载流子效应相反的符号法拉第旋转和带间跃迁法拉第旋转主要在自由载流子 效应法拉第旋转,使得净法拉第旋转在宽的IR光谱区域保持几乎不变,其中短波长极限通常接近带隙吸收。 因此,满足这些条件的半导体类可用作红外线中的高性能宽带光隔离器。 合适的材料包括具有合适纯度的InAs。

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