Patent search ap:("Electronics AND Telecommunications Research Institute") AND inv:"Choon-Gi Choi" Page 1

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发明授权
Pressure-strain sensor including a graphene structure 有权

公开(公告)号：US11002619B2

公开(公告)日：2021-05-11

申请号：US16389473

申请日：2019-04-19

Applicant: Electronics and Telecommunications Research Institute

Inventor： Seong Jun Kim , Choon-Gi Choi , Shuvra Mondal

IPC: G01L1/22 , G01L9/00

Abstract: Provided is a pressure-strain sensor including a graphene structure having a three-dimensional porous structure, planar sheets provided on a surface of the graphene structure, and a polymer layer configured to cover the graphene structure and the planar sheets, wherein each of the planar sheets contains a transition metal chalcogenide compound.

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