公开(公告)号：US20200212653A1

公开(公告)日：2020-07-02

申请号：US16539665

申请日：2019-08-13

Applicant: Electronics and Telecommunications Research Institute

Inventor： O-Kyun KWON ,  namje KIM ,  Miran PARK ,  Tae-Soo KIM ,  Shinmo AN ,  Won Seok HAN

IPC: H01S5/125 ,  H01S5/34 ,  H01S5/065

Abstract: Provided is a tunable semiconductor laser including an active gain region in which an optical signal is generated according to a modulation signal, a mode control region in which a resonant mode is controlled according to a mode control signal, and a signal chirp of the optical signal is compensated according to a first compensation signal determined based on the modulation signal, and a distributed Bragg reflector (DBR) region in which an oscillation wavelength of the optical signal is determined based on a wavelength selection signal for the optical signal, a second compensation signal for compensating for a thermal chirp of the optical signal on a basis of the modulation signal, and a heater signal provided to a heater electrode.

公开(公告)号：US20200212652A1

公开(公告)日：2020-07-02

申请号：US16561420

申请日：2019-09-05

Applicant: Electronics and Telecommunications Research Institute

Inventor： Namje KIM ,  O-Kyun KWON ,  Miran PARK ,  Tae-Soo KIM ,  Shinmo AN ,  Won Seok HAN

IPC: H01S5/12 ,  H01S5/028 ,  H01S5/026 ,  H01S5/042 ,  H01S5/024

Abstract: Provided is a quarter-wavelength shifted distributed feedback laser diode. The laser diode includes a substrate having a laser diode section and a phase adjustment section, a waveguide layer on the substrate, a clad layer on the waveguide layer, a grating disposed in the clad layer in the laser diode section, an anti-reflection coating disposed on one side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the laser diode section, and a high reflection coating disposed on the other side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the phase adjustment section.