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1.发明公开公开(公告)号：US20240053652A1
公开(公告)日：2024-02-15
申请号：US18363466
申请日：2023-08-01
Inventor： Hyun Soo KIM , Ho Sung KIM , Yongsoon BAEK , Won Seok HAN
CPC classification number: G02F1/212 , G02F1/225 , G02F1/2257
Abstract: Disclosed are a Mach-Zehnder interferometric optical modulator and a method for manufacturing the same. The modulator includes first and second lower clad layers stacked on a substrate, a core layer on the first and second lower clad layers, a first upper clad layer on the core layer, a second upper clad layer on the first upper clad layer, and electrodes on the second upper clad layer. The second upper clad layer includes an input waveguide, an output waveguide spaced apart from the input waveguide, branch waveguides branched from the input waveguide and coupled to the output waveguide, and insulating blocks provided on both outer sides of the branch waveguides.
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公开(公告)号：US20130287339A1
公开(公告)日：2013-10-31
申请号：US13759690
申请日：2013-02-05
Inventor： Jung-Ho SONG , Hong-Seok SEO , Won Seok HAN , Bong Je PARK
IPC: G02B6/32
CPC classification number: G02B6/32 , G02B6/1228 , G02B6/30 , G02B6/42
Abstract: Disclosed is a planar waveguide element including a first cylindrical lens disposed based on an z-axis and configured to collimate beams emitted from a plurality of emitters of a laser diode bar; a lens array configured to gather the beam emitted from each emitter via the first cylindrical lens; a plurality of first waveguides existing on an x-y plane by a number of the plurality of emitters and configured to gather at one place via a bending section; a taper configured to connect the lens array and each first waveguide, a width of the taper being narrower from the lens array to the plurality of first waveguide; and a combined waveguide configured to combine the plurality of first waveguides into one.
Abstract translation: 公开了一种平面波导元件，其包括基于z轴设置的第一柱面透镜，并且被配置为准直从激光二极管条的多个发射极发射的光束; 透镜阵列，被配置为经由所述第一柱面透镜收集从每个发射器发射的光束; 多个第一波导，其存在于多个发射器的数目的x-y平面上，并经配置以经由弯曲部在一个位置聚集; 锥形构造成连接透镜阵列和每个第一波导，锥形的宽度从透镜阵列窄到多个第一波导; 以及组合波导，其被配置为将所述多个第一波导组合成一个。
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公开(公告)号：US20210255385A1
公开(公告)日：2021-08-19
申请号：US17173681
申请日：2021-02-11
Inventor： Joong-Seon CHOE , Duk Jun KIM , Jong-Hoi KIM , Jonghyurk PARK , Won Seok HAN
IPC: G02B6/12 , G02B6/42 , G02B6/122 , H01L31/0232
Abstract: Provided is a waveguide photodetector including a semiconductor substrate, a first optical waveguide and a second optical waveguide, which are sequentially laminated on the semiconductor substrate, in which each of the first optical waveguide and the second optical waveguide includes a first portion and a second portion, and the first portion extends from the second portion in a first direction parallel to a top surface of the semiconductor substrate, a refractive index matching layer disposed on the second portion of the second optical waveguide, a clad layer disposed on the refractive index matching layer, and an absorber disposed between the refractive index matching layer and the clad layer. Here, the second optical waveguide has a first conductive-type, the clad layer has a second conductive-type opposite to the first conductive-type, and the refractive index matching layer includes a first semiconductor layer that is an intrinsic semiconductor layer.
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公开(公告)号：US20180309011A1
公开(公告)日：2018-10-25
申请号：US15956107
申请日：2018-04-18
Inventor： Jae-Sik SIM , Kisoo KIM , Won Seok HAN
IPC: H01L31/107 , H01L31/02 , H01L31/0224 , H01L31/0216 , H01L31/0304 , H01L31/18
CPC classification number: H01L31/107 , H01L31/02027 , H01L31/02161 , H01L31/022408 , H01L31/03042 , H01L31/184
Abstract: Provided is an optical detection device including a first ohmic contact layer of a first conductivity type, a second ohmic contact layer of a second conductivity type, and first and second mesa structures stacked between the first and second ohmic contact layers. The first mesa structure includes an electric field buffer layer; and a diffusion layer formed in the electric field buffer layer. The second mesa structure includes a light absorbing layer and a grading layer on the light absorbing layer.
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公开(公告)号：US20200212653A1
公开(公告)日：2020-07-02
申请号：US16539665
申请日：2019-08-13
Inventor： O-Kyun KWON , namje KIM , Miran PARK , Tae-Soo KIM , Shinmo AN , Won Seok HAN
Abstract: Provided is a tunable semiconductor laser including an active gain region in which an optical signal is generated according to a modulation signal, a mode control region in which a resonant mode is controlled according to a mode control signal, and a signal chirp of the optical signal is compensated according to a first compensation signal determined based on the modulation signal, and a distributed Bragg reflector (DBR) region in which an oscillation wavelength of the optical signal is determined based on a wavelength selection signal for the optical signal, a second compensation signal for compensating for a thermal chirp of the optical signal on a basis of the modulation signal, and a heater signal provided to a heater electrode.
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Patent Agency Ranking
公开(公告)号：US20200212652A1
公开(公告)日：2020-07-02
申请号：US16561420
申请日：2019-09-05
Inventor： Namje KIM , O-Kyun KWON , Miran PARK , Tae-Soo KIM , Shinmo AN , Won Seok HAN
Abstract: Provided is a quarter-wavelength shifted distributed feedback laser diode. The laser diode includes a substrate having a laser diode section and a phase adjustment section, a waveguide layer on the substrate, a clad layer on the waveguide layer, a grating disposed in the clad layer in the laser diode section, an anti-reflection coating disposed on one side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the laser diode section, and a high reflection coating disposed on the other side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the phase adjustment section.
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公开(公告)号：US20170168371A1
公开(公告)日：2017-06-15
申请号：US15193889
申请日：2016-06-27
Inventor： Duk Jun KIM , Young Ho KO , Dong Young KIM , Won Seok HAN , Yong Hwan KWON , Jong Hoi KIM , Byung Seok CHOI
CPC classification number: G02F1/2257 , G02F2001/212
Abstract: There is provided a method for manufacturing a Mach-Zehnder electrooptic modulator including forming an intrinsic semiconductor layer including a Group III-V compound semiconductor on a Group III-V compound semiconductor substrate having an active region and a passive region, doping a first impurity in the intrinsic semiconductor layer corresponding to the active region to form a core layer disposed on the substrate and undoped with the first impurity and an upper clad layer disposed on the core layer and including a region doped with the first impurity, and patterning the core layer and the upper clad layer.
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公开(公告)号：US20140120651A1
公开(公告)日：2014-05-01
申请号：US13841772
申请日：2013-03-15
Inventor： Yong-Duck CHUNG , Dae-Hyung CHO , Won Seok HAN
IPC: H01L31/18
CPC classification number: H01L31/186 , C23C14/5853 , C23C14/5866 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/02554 , H01L21/02557 , H01L21/02614 , H01L31/0749 , H01L31/1828 , H01L31/1864 , Y02E10/50 , Y02E10/541 , Y02E10/543 , Y02P70/521
Abstract: A method of manufacturing a solar cell includes forming a buffer layer between an optical absorption layer and a window electrode layer. Forming the buffer layer includes depositing a metal material on the optical absorption layer, supplying a non-metal material on the optical absorption layer, supplying a gas material including oxygen atoms on the optical absorption layer, and reacting the metal material with the non-metal material. The gas material reacts with the metal material and the non-metal material to form a metal sulfur oxide on the optical absorption layer.
Abstract translation: 太阳能电池的制造方法包括在光吸收层和窗电极层之间形成缓冲层。 形成缓冲层包括在光吸收层上沉积金属材料，在光吸收层上提供非金属材料，在光吸收层上提供包含氧原子的气体材料，并使金属材料与非金属材料反应 材料。 气体材料与金属材料和非金属材料反应，以在光吸收层上形成金属硫氧化物。
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公开(公告)号：US20230227960A1
公开(公告)日：2023-07-20
申请号：US17968126
申请日：2022-10-18
Inventor： O-Kyun KWON , Namje KIM , Ho Sung KIM , Miran PARK , SEUNGCHUL LEE , Won Seok HAN
CPC classification number: C23C14/042 , G02B6/132 , G02B2006/12173
Abstract: Provided is a method of manufacturing an optical integrated device. The method includes forming a lower clad layer on a substrate, forming a plurality of mask patterns arranged in one direction on the lower clad layer, forming a core layer on a portion of the lower clad layer by a selective area growth method using the mask patterns as deposition masks, and forming an upper clad layer on the core layers, wherein the mask patterns have different widths or include mask layers of different materials.
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公开(公告)号：US20160035568A1
公开(公告)日：2016-02-04
申请号：US14812856
申请日：2015-07-29
Inventor： Yong-Duck CHUNG , DAEHYUNG CHO , Woo Jung LEE , Won Seok HAN
IPC: H01L21/02
CPC classification number: H01L21/02568 , C23C14/0021 , C23C14/0057 , C23C14/0063 , C23C14/0078 , C23C14/0623 , C23C14/14 , C23C14/243 , C23C14/5866 , H01L21/02557 , H01L21/0256 , H01L21/0259 , H01L21/02614 , H01L21/02631
Abstract: Provided is a method of manufacturing a transition metal chalcogenide thin film including providing a substrate having a transition metal film thereon, evaporating a chalcogen source to form a chalcogen material having a second molecular structure, decomposing the chalcogen material having the second molecular structure to form the chalcogen material having the first molecular structure, in which the first molecular structure includes relatively less atoms than the second molecular structure, and providing the chalcogen material having the first molecular structure on a transition metal film.
Abstract translation: 提供了一种制造过渡金属硫族化物薄膜的方法，包括提供其上具有过渡金属膜的基底，蒸发硫属原料源以形成具有第二分子结构的硫族元素材料，分解具有第二分子结构的硫族元素材料以形成 具有第一分子结构的硫属材料，其中第一分子结构包含比第二分子结构相对较少的原子，并且在过渡金属膜上提供具有第一分子结构的硫族元素材料。
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