IC DIE FORMING METHOD AND IC DIE STRUCTURE
    1.
    发明公开

    公开(公告)号:US20230387004A1

    公开(公告)日:2023-11-30

    申请号:US17826141

    申请日:2022-05-26

    CPC classification number: H01L23/528 H01L21/82 H03K17/08

    Abstract: An integrated circuit die forming method, for forming a plurality of integrated circuit dies on a semiconductor wafer, comprising: forming a first device, a second device in a first die in a first area; forming a metal layer connected to the first device and the second device; forming a third device, a fourth device in a second die in a second area; forming the metal layer connected to the third device and the fourth device, wherein a scribe area exists between the first area and the second area is separated by; wherein the first device and the third device are used for synchronization and are components of a class D amplifier; wherein the second device is used for preventing leakage currents of the first die and the fourth device is used for preventing leakage currents of the second die.

    Electronic device and method for overcurrent detection

    公开(公告)号:US12237834B1

    公开(公告)日:2025-02-25

    申请号:US18377372

    申请日:2023-10-06

    Abstract: An electronic device and a method for overcurrent detection are disclosed herein. The electronic device causes a high-side offsetting voltage drop and converts a voltage difference between a first voltage at an input terminal of an upper-bridge power component of a power stage and a sum of a first balancing voltage drop and the high-side offsetting voltage drop into a first current. The electronic device further converts a voltage difference between a second voltage of an output terminal of the upper-bridge power component and a second balancing voltage drop into a second current, compares the first current and the second current, and generates a high-side overcurrent protection (OCP) signal with logic high for a driver of the power stage when the first current is stronger than the second current, such that the driver turns off the upper-bridge power component accordingly.

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