公开(公告)号：US20240178796A1

公开(公告)日：2024-05-30

申请号：US18071581

申请日：2022-11-29

申请人： Elite Semiconductor Microelectronics Technology Inc.

发明人： Isaac Y. Chen

IPC分类号： H03F1/02 ,  H03F3/217

CPC分类号： H03F1/0205 ,  H03F3/217 ,  H03F2200/03

摘要： An audio amplifier includes a plurality of power stages, a driving circuit, and a power stage control circuit. The driving circuit is arranged to drive the power stages. The power stage control circuit includes a feedback circuit and a control circuit. The feedback circuit is coupled to the power stages, and is arranged to generate a feedback signal according to at least one detection input, wherein the at least one detection input includes at least one of a power, a voltage signal corresponding to a switching time of the power stages, and a voltage signal corresponding to a switching frequency of the power stages. The control circuit is coupled between the feedback circuit and the power stages, and is arranged to generate a control signal according to the feedback signal, wherein the control signal is arranged to dynamically control a number of turned-on power stages in the power stages.

公开(公告)号：US20230387004A1

公开(公告)日：2023-11-30

申请号：US17826141

申请日：2022-05-26

申请人： Elite Semiconductor Microelectronics Technology Inc.

发明人： Chih-Sheng Chang ,  Isaac Y. Chen

IPC分类号： H01L23/528 ,  H01L21/82 ,  H03K17/08

CPC分类号： H01L23/528 ,  H01L21/82 ,  H03K17/08

摘要： An integrated circuit die forming method, for forming a plurality of integrated circuit dies on a semiconductor wafer, comprising: forming a first device, a second device in a first die in a first area; forming a metal layer connected to the first device and the second device; forming a third device, a fourth device in a second die in a second area; forming the metal layer connected to the third device and the fourth device, wherein a scribe area exists between the first area and the second area is separated by; wherein the first device and the third device are used for synchronization and are components of a class D amplifier; wherein the second device is used for preventing leakage currents of the first die and the fourth device is used for preventing leakage currents of the second die.