GEOMETRIC TRANSFORMATIONS FOR RADIO FREQUENCY (RF) PERFORMANCE IN LAYERED ADDITIVE MANUFACTURING OF PASSIVE AND ACTIVE RF ELECTRONICS

    公开(公告)号:US20240372238A1

    公开(公告)日:2024-11-07

    申请号:US18628417

    申请日:2024-04-05

    Applicant: Elve Inc.

    Abstract: A circuit device fabricated in device layers, comprises a filter-type circuit fabricated in the device layers; a transmission line fabricated in the device layers and connected to the filter-type circuit; and a corrective mismatch disposed within the transmission line, fabricated in at least one of the device layers, and designed with a corrective impedance to improve matching performance therebetween. A waveguide device fabricated in device layers, comprises a first waveguide fabricated in the device layers and having a first dimension aligned with a first layer; a second waveguide fabricated in the device layers and having a second dimension aligned with a second layer; and a waveguide transformer fabricated in the device layers and having a transformer dimension aligned with a third layer.

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