WIDE-BANDWIDTH RADIO-FREQUENCY (RF) WINDOWS AND METHOD

    公开(公告)号:US20240372236A1

    公开(公告)日:2024-11-07

    申请号:US18653646

    申请日:2024-05-02

    Applicant: Elve Inc.

    Abstract: A radio-frequency (RF) window comprises a first flange assembly including a first flange having a first flange thickness between a first surface and a second surface, and a first waveguide channel; and a first window element having a first window thickness and disposed in the first waveguide channel at a first location; and a second flange assembly stacked against the first flange assembly, the second flange assembly including a second flange having a second flange thickness between a third surface and a fourth surface, and a second waveguide channel; and a second window element having a second window thickness and disposed in the second waveguide channel at a second location, such that when the first flange assembly is stacked against the second flange assembly the second window element has a predetermined distance to the first window element, the predetermined distance selected based on a desired frequency band of operations.

    GEOMETRIC TRANSFORMATIONS FOR RADIO FREQUENCY (RF) PERFORMANCE IN LAYERED ADDITIVE MANUFACTURING OF PASSIVE AND ACTIVE RF ELECTRONICS

    公开(公告)号:US20240372238A1

    公开(公告)日:2024-11-07

    申请号:US18628417

    申请日:2024-04-05

    Applicant: Elve Inc.

    Abstract: A circuit device fabricated in device layers, comprises a filter-type circuit fabricated in the device layers; a transmission line fabricated in the device layers and connected to the filter-type circuit; and a corrective mismatch disposed within the transmission line, fabricated in at least one of the device layers, and designed with a corrective impedance to improve matching performance therebetween. A waveguide device fabricated in device layers, comprises a first waveguide fabricated in the device layers and having a first dimension aligned with a first layer; a second waveguide fabricated in the device layers and having a second dimension aligned with a second layer; and a waveguide transformer fabricated in the device layers and having a transformer dimension aligned with a third layer.

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