FORMULATION FOR ACIDIC WET CHEMICAL ETCHING OF SILICON WAFERS
    1.
    发明申请
    FORMULATION FOR ACIDIC WET CHEMICAL ETCHING OF SILICON WAFERS 审中-公开
    酸性水溶液硅酸盐化学蚀刻配方

    公开(公告)号:US20140370643A1

    公开(公告)日:2014-12-18

    申请号:US14240075

    申请日:2012-08-22

    IPC分类号: H01L31/0236 C09K13/08

    摘要: Acid etch compositions for etching multicrystalline silicon substrates are disclosed which may include hydrofluoric acid, an oxidizer, an acid diluent, and soluble silicon. The soluble silicon may be hexafluorosilicic acid or ammonium fluorosilicate. Silicon substrates patterned with organic resist may be used with the acid etch compositions for selective silicon patterning for solar cell applications.

    摘要翻译: 公开了用于蚀刻多晶硅衬底的酸蚀组合物,其可以包括氢氟酸,氧化剂,酸稀释剂和可溶性硅。 可溶性硅可以是六氟硅酸或氟硅酸铵。 用有机抗蚀剂图案化的硅衬底可以与用于太阳能电池应用的选择性硅图案化的酸蚀组合物一起使用。