公开(公告)号：US20120008383A1

公开(公告)日：2012-01-12

申请号：US13154912

申请日：2011-06-07

申请人： Erwan Gapihan ,  Kenneth Mackay ,  Jason Reid

发明人： Erwan Gapihan ,  Kenneth Mackay ,  Jason Reid

IPC分类号： G11C11/15

CPC分类号： G11C11/16 ,  B82Y25/00 ,  G11C11/1675 ,  H01F10/3254

摘要： The present disclosure concerns a magnetic element to be written using a thermally-assisted switching write operation comprising a magnetic tunnel junction formed from a tunnel barrier being disposed between first and second magnetic layers, said second magnetic layer having a second magnetization which direction can be adjusted during a write operation when the magnetic tunnel junction is heated at a high threshold temperature; an upper current line connected at the upper end of the magnetic tunnel junction; and a strap portion extending laterally and connected to the bottom end of the magnetic tunnel junction; the magnetic device further comprising a bottom thermal insulating layer extending substantially parallel to the strap portion and arranged such that the strap portion is between the magnetic tunnel junction and the bottom thermal insulating layer. The magnetic element allows for reducing heat losses during the write operation and has reduced power consumption.

摘要翻译： 本公开涉及使用热辅助切换写入操作来写入的磁性元件，其包括由隧道势垒形成的磁性隧道结，所述隧道势垒设置在第一和第二磁性层之间，所述第二磁性层具有可以调整该方向的第二磁化 在磁隧道结被加热到高阈值温度的写操作期间; 连接在磁隧道结上端的上电流线; 以及横向延伸并连接到磁性隧道结的底端的带部分; 磁性装置还包括基本上平行于带部分延伸的底部绝热层，并且布置成使得带部分在磁性隧道结和底部绝热层之间。 磁性元件允许在写入操作期间减少热损失并降低功耗。

公开(公告)号：US08411500B2

公开(公告)日：2013-04-02

申请号：US13154912

申请日：2011-06-07

申请人： Erwan Gapihan ,  Kenneth Mackay ,  Jason Reid

发明人： Erwan Gapihan ,  Kenneth Mackay ,  Jason Reid

IPC分类号： G11C11/15 ,  G11C11/14

CPC分类号： G11C11/16 ,  B82Y25/00 ,  G11C11/1675 ,  H01F10/3254

摘要： The present disclosure concerns a magnetic element to be written using a thermally-assisted switching write operation comprising a magnetic tunnel junction formed from a tunnel barrier being disposed between first and second magnetic layers, said second magnetic layer having a second magnetization which direction can be adjusted during a write operation when the magnetic tunnel junction is heated at a high threshold temperature; an upper current line connected at the upper end of the magnetic tunnel junction; and a strap portion extending laterally and connected to the bottom end of the magnetic tunnel junction; the magnetic device further comprising a bottom thermal insulating layer extending substantially parallel to the strap portion and arranged such that the strap portion is between the magnetic tunnel junction and the bottom thermal insulating layer. The magnetic element allows for reducing heat losses during the write operation and has reduced power consumption.

摘要翻译： 本公开涉及使用热辅助切换写入操作来写入的磁性元件，其包括由隧道势垒形成的磁性隧道结，所述隧道势垒设置在第一和第二磁性层之间，所述第二磁性层具有可以调整该方向的第二磁化 在磁隧道结被加热到高阈值温度的写操作期间; 连接在磁隧道结上端的上电流线; 以及横向延伸并连接到磁性隧道结的底端的带部分; 磁性装置还包括基本上平行于带部分延伸的底部绝热层，并且布置成使得带部分在磁性隧道结和底部绝热层之间。 磁性元件允许在写入操作期间减少热损失并降低功耗。

公开(公告)号：US08289765B2

公开(公告)日：2012-10-16

申请号：US12708584

申请日：2010-02-19

申请人： Virgile Javerliac ,  Erwan Gapihan ,  Mourad El Baraji

发明人： Virgile Javerliac ,  Erwan Gapihan ,  Mourad El Baraji

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： A magnetic random access memory (MRAM) cell with a thermally assisted writing procedure comprising a magnetic tunnel junction formed from a magnetic storage layer, a reference layer, and an insulating layer inserted between the reference layer and the storage layer; and a first strap portion laterally connecting one end of the magnetic tunnel junction to a first selection transistor; wherein the cell further comprises a second strap portion extending opposite to the first strap portion and connecting laterally said one end of the magnetic tunnel junction to a second selection transistor, and in that said first and second strap portions being adapted for passing a portion of current via the first and second selection transistors. The disclosed cell has lower power consumption than conventional MRAM cells.

摘要翻译： 一种具有热辅助写入程序的磁性随机存取存储器（MRAM）单元，包括由磁性存储层，参考层和插入参考层和存储层之间的绝缘层形成的磁性隧道结; 以及将所述磁性隧道结的一端横向连接到第一选择晶体管的第一带部分; 其中所述电池还包括与所述第一带部分相对延伸并且将所述磁性隧道结的所述一端横向连接到第二选择晶体管的第二带部分，并且所述第一和第二带部分适于使电流的一部分 经由第一和第二选择晶体管。 所公开的电池具有比常规MRAM电池低的功率消耗。