Method and apparatus for addressing thickness variations of a trench floor formed in a semiconductor substrate
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    发明申请
    Method and apparatus for addressing thickness variations of a trench floor formed in a semiconductor substrate 有权
    用于解决在半导体衬底中形成的沟槽底板的厚度变化的方法和装置

    公开(公告)号:US20060030064A1

    公开(公告)日:2006-02-09

    申请号:US11031423

    申请日:2005-01-07

    IPC分类号: H01L21/00

    CPC分类号: H01L22/12

    摘要: A method for utilizing interference fringe patterns generated when milling a trench through a semiconductor substrate by a method such as FIB milling, to determine and optimize the thickness uniformity of the trench bottom. The interference fringes may be mapped and the mapping used to direct the FIB milling to those regions which are thicker to correct observed non-uniformities in the trench floor thickness by varying the pixel dwell time across the milled area. The interference fringe mapping may be used to develop computerized contour lines to automate the pixel dwell time variations as described above, for correcting non-uniformities in the trench floor thickness. The method may be applied to applications other than trench formation for backside editing, such as monitoring progress in forming a milled object.

    摘要翻译: 一种利用通过诸如FIB铣削的方法在通过半导体衬底铣削沟槽时产生的干涉条纹图案的方法,以确定和优化沟槽底部的厚度均匀性。 可以映射干涉条纹,并且映射用于将FIB铣削引导到那些较厚的区域,以通过改变铣削区域上的像素停留时间来修正沟槽底板厚度中观察到的不均匀性。 如上所述,干涉条纹映射可用于开发计算机化轮廓线以自动化像素驻留时间变化,以校正沟槽底板厚度中的不均匀性。 该方法可以应用于除了用于背面编辑的沟槽形成之外的应用,例如监测形成铣削对象的进展情况。