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    APPARATUS AND METHOD FOR OPTICAL INTERFERENCE FRINGE BASED INTEGRATED CIRCUIT PROCESSING
    2.
    发明申请
    APPARATUS AND METHOD FOR OPTICAL INTERFERENCE FRINGE BASED INTEGRATED CIRCUIT PROCESSING 有权
    基于光干扰法的基于集成电路处理的装置和方法

    公开(公告)号：US20070293052A1

    公开(公告)日：2007-12-20

    申请号：US11754466

    申请日：2007-05-29

    申请人： Erwan Le Roy ,  Chun-Cheng Tsao ,  Theodore Lundquist ,  Rajesh Jain

    发明人： Erwan Le Roy ,  Chun-Cheng Tsao ,  Theodore Lundquist ,  Rajesh Jain

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3065 ,  H01J37/228 ,  H01J37/3056 ,  H01J2237/2482 ,  H01J2237/30466 ,  H01J2237/31749 ,  H01L22/12 ,  H01L22/26

    摘要： An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, one or more wavelength lights are directed on the integrated circuit and based upon the detection of interference fringes and characteristics of the same, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection and/or characteristics of interference fringes. A charged particle beam trench milling operation is performed in or on the substrate of an integrated circuit. Light is directed on the floor of the trench. Interference fringes may be formed from the constructive or destructive interference between the light reflected from the floor and the light from the circuit structures. Resulting fringes will be a function, in part, of the thickness and/or profile of the trench floor. Milling may be controlled as a function of the detected fringe patterns.

    摘要翻译： 一种使用光学干涉条纹处理集成电路的装置和方法。 在处理期间，一个或多个波长的光被引导到集成电路上，并且基于干涉条纹和其特性的检测，可以控制进一步的处理。 一种实施方案涉及集成电路的带电粒子束处理，作为干涉条纹的检测和/或特征的函数。 在集成电路的衬底中或其上执行带电粒子束沟槽铣削操作。 光线指向沟槽的地板。 干涉条纹可以由从地板反射的光与来自电路结构的光之间的建构性或破坏性干扰形成。 所产生的条纹将部分地是沟槽地板的厚度和/或轮廓的函数。 作为检测到的条纹图案的函数可以控制铣削。

    Apparatus and method for optical interference fringe based integrated circuit processing
    3.
    发明申请
    Apparatus and method for optical interference fringe based integrated circuit processing 有权
    用于光干涉条纹集成电路处理的装置和方法

    公开(公告)号：US20060188797A1

    公开(公告)日：2006-08-24

    申请号：US11362240

    申请日：2006-02-24

    申请人： Erwan Roy ,  Chun-Cheng Tsao ,  Theodore Lundquist

    发明人： Erwan Roy ,  Chun-Cheng Tsao ,  Theodore Lundquist

    IPC分类号： G03C5/00 ,  A61N5/00 ,  G21G5/00

    CPC分类号： H01J37/3174 ,  B23K26/03 ,  B23K26/032 ,  B82Y10/00 ,  B82Y40/00

    摘要： An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, light is directed on the integrated circuit and based upon the detection of interference fringes, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection of interference fringes. A charged particle beam trench milling operation is performed in or on the substrate of an integrated circuit. Light is directed on the floor of the trench. When the floor approaches the underlying circuit structures, some light is reflected from the floor of the trench and some light penetrates the substrate and is reflected off the underlying circuit structures. Interference fringes may be formed from the constructive or destructive interference between the light reflected from the floor and the light from the circuit structures. Processing may be controlled as function of the detection of interference fringes.

    摘要翻译： 一种使用光学干涉条纹处理集成电路的装置和方法。 在处理期间，光被引导到集成电路上，并且基于干涉条纹的检测，可以控制进一步的处理。 一种实施方案涉及集成电路的带电粒子束处理作为干涉条纹检测的功能。 在集成电路的衬底中或其上执行带电粒子束沟槽铣削操作。 光照在沟槽的地板上。 当地板接近下面的电路结构时，一些光从沟槽的底部反射，并且一些光穿透衬底并从下面的电路结构反射。 干涉条纹可以由从地板反射的光与来自电路结构的光之间的建构性或破坏性干扰形成。 作为检测干涉条纹的功能，可以控制处理。

    FIB milling of copper over organic dielectrics
    7.
    发明申请
    FIB milling of copper over organic dielectrics 有权
    FIB在有机电介质上铣削铜

    公开(公告)号：US20050072756A1

    公开(公告)日：2005-04-07

    申请号：US10678438

    申请日：2003-10-03

    申请人： Vladimir Makarov ,  Theodore Lundquist

    发明人： Vladimir Makarov ,  Theodore Lundquist

    IPC分类号： C23F4/00 ,  H01J37/305 ,  H01L21/3213 ,  C23F1/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68

    CPC分类号： C23F4/00 ,  H01J37/3053 ,  H01J2237/3114 ,  H01J2237/31744 ,  H01L21/32131

    摘要： Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.

    摘要翻译： 公开了用于通过在铜的一部分处引导带电粒子束并将铜暴露于足以增强铜相对于去除铜的前体的前体来研磨邻近有机低k电介质的铜的装置和方法 电介质，其中所述前体含有氧化剂，在铜上具有高粘附系数和长停留时间，含有足以阻止电介质氧化的碳和硅中的至少一种的原子，并且不含有氯原子 ，溴或碘。 在一个实施方案中，前体包括由硝基乙醇，硝基乙烷，硝基丙烷，硝基甲烷，基于硅氮烷的化合物如六甲基环己基硅氮烷和基于硅氧烷的化合物如八甲基 - 环四硅氧烷组成的组中的至少一种。 还公开了该方法的产品。

    Sub-resolution alignment of images
    8.
    发明申请
    Sub-resolution alignment of images 有权

    公开(公告)号：US20050044519A1

    公开(公告)日：2005-02-24

    申请号：US10946667

    申请日：2004-09-21

    申请人： Madhumita Sengupta ,  Mamta Slnha ,  Theodore Lundquist ,  William Thompson

    发明人： Madhumita Sengupta ,  Mamta Slnha ,  Theodore Lundquist ,  William Thompson

    IPC分类号： G06F9/455 ,  G06F17/50 ,  G06T7/00

    CPC分类号： G06K9/32 ,  G06T7/001 ,  G06T7/32 ,  G06T2207/30148

    摘要： A plurality of images, including a first image and a second image having a higher resolution than the first image, are aligned by generating an oversampled cross correlation image that corresponds to relative displacements of the first and second images, and, based on the oversampled cross correlation image, determining an offset value that corresponds to a misalignment of the first and second images. The first and second images are aligned to a precision greater than the resolution of the first image, based on the determined offset value. Enhanced results are achieved by performing another iteration of generating an oversampled cross correlation image and determining an offset value for the first and second images. Generating the oversampled cross correlation image may involve generating a cross correlation image that corresponds to relative displacements of the first and second images, and oversampling the cross correlation image to generate the oversampled cross correlation image.