公开(公告)号：US08133791B2

公开(公告)日：2012-03-13

申请号：US12306653

申请日：2007-06-12

申请人： Erwin B. Hijzen ,  Philippe Meunier-Bellard ,  Johannes J. T. M. Donkers

发明人： Erwin B. Hijzen ,  Philippe Meunier-Bellard ,  Johannes J. T. M. Donkers

IPC分类号： H01L21/331

CPC分类号： H01L29/66287 ,  H01L29/66242

摘要： The invention relates to a method according to the part of the surface of the semiconductor body adjoining the opening and which is to be kept free is provided with a cover layer after which the high-crystalline layer is formed by means of a deposition process. The material of the cover layer can then easily be chosen such that it can be selectively etched relative to the silicon underneath. In addition, the cover layer can easily be selectively deposited on the relevant part of the surface because use can be made of an anisotropic deposition process. In such a process the cover layer is not deposited in the hollow and on the bottom of the hollow. It will be apparent that for the high-crystalline layer also other materials can be chosen such as SiGe having such low Ge contents that the SiGe cannot be etched selectively very well compared to the Silicon.

摘要翻译： 本发明涉及一种根据与开口相邻的半导体主体的表面部分的方法，该方法要保持自由，该覆盖层之后通过沉积工艺形成高结晶层。 然后可以容易地选择覆盖层的材料，使得其可以相对于下面的硅选择性地被蚀刻。 此外，可以容易地将覆盖层选择性地沉积在表面的相关部分上，因为可以使用各向异性沉积工艺。 在这种过程中，覆盖层不会沉积在中空部分的中空部分和底部中。 显而易见的是，对于高结晶层，还可以选择其他材料，例如具有如此低Ge含量的SiGe，与硅相比，SiGe不能被选择性地非常好地蚀刻。