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公开(公告)号：US06319815B1
公开(公告)日：2001-11-20
申请号：US09419951
申请日：1999-10-18
IPC分类号： H01L214763
CPC分类号： H01L21/76808 , H01L21/76801
摘要： A method for forming a wiring structure on a semiconductor substrate, comprising the following steps: a step for forming a low dielectric constant dielectric film and an etching stopper, sequentially, on said semiconductor substrate; a step for forming a resist mask having a pattern for forming via-holes on the etching stopper film; a step for forming via-holes on the low dielectric constant dielectric film through said resist mask; a step for filling said via-holes with an embedding material and for heating the embedding material to harden; a step for maintaining the embedding material at a predetermined thickness on the bottoms of the via-holes by performing etching back on the embedding material being heated to be harden; a step for forming a resist mask having a pattern for forming trench holes on said etching stopper film; a step for forming the trench holes on said low dielectric film constant dielectric through said resist mask, while removing the embedding material remaining on the bottoms of said via-holes; and a step for embedding metal into said trench holes and said via-holes, wherein the embedding material mainly includes a thermo-bridge forming compound therein, thereby generating no bubbles even when said embedding material is being filled into gutters having a large aspect ratio thereof.
摘要翻译： 一种在半导体衬底上形成布线结构的方法，包括以下步骤：在所述半导体衬底上依次形成低介电常数介电膜和蚀刻阻挡层的步骤; 用于形成具有用于在蚀刻停止膜上形成通孔的图案的抗蚀剂掩模的步骤; 通过所述抗蚀剂掩模在所述低介电常数介电膜上形成通孔的步骤; 用嵌入材料填充所述通孔并加热所述嵌入材料以硬化的步骤; 通过对被加热的硬化的嵌入材料进行蚀刻，将通孔的底部的嵌入材料保持在预定厚度的步骤; 在所述蚀刻阻挡膜上形成具有用于形成沟槽的图案的抗蚀剂掩模的步骤; 通过所述抗蚀剂掩模在所述低电介质膜恒定电介质上形成沟槽的步骤，同时去除残留在所述通孔的底部上的包埋材料; 以及将金属嵌入所述沟槽和所述通孔的步骤，其中所述嵌入材料主要包括其中的热电桥形成化合物，即使当所述嵌入材料被填充到具有大纵横比的沟槽中时也不产生气泡 。
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公开(公告)号：US20080227678A1
公开(公告)日：2008-09-18
申请号：US11791836
申请日：2005-12-26
申请人： Jun Koshiyama , Yasumitsu Taira , Chima Shinohara
发明人： Jun Koshiyama , Yasumitsu Taira , Chima Shinohara
IPC分类号： G03F7/42
CPC分类号： G03F7/168
摘要： A cleaning liquid for lithography that exhibits equally excellent cleaning performance for resists of a wide variety of compositions, such as various resists for i-line, KrF and ArF, silicic resist and chemical amplification type positive resist, and that excels in post-treatment dryability, being free from any deterioration of resist performance by cleaning. There is provided a cleaning liquid for lithography, comprising at least one member (A) selected from among lower alkyl esters of acetic acid and propionic acid and at least one member (B) selected from among ketones having 5 to 7 carbon atoms per molecule in a mass ratio of (A):(B) of 4:6 to 7:3.
摘要翻译： 用于光刻的清洁液体，其具有相当优异的清洁性能，可用于各种组合物的抗蚀剂，例如用于i线，KrF和ArF的各种抗蚀剂，硅抗蚀剂和化学放大型正性抗蚀剂，并且具有优异的后处理干燥性 通过清洁没有抗蚀剂性能的任何劣化。 提供了一种用于光刻的清洁液体，其包含至少一种选自乙酸和丙酸的低级烷基酯和至少一种选自每分子具有5至7个碳原子的酮的成员（B） （A）:( B）的质量比为4：6〜7：3。
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公开(公告)号：US07576046B2
公开(公告)日：2009-08-18
申请号：US11791836
申请日：2005-12-26
申请人： Jun Koshiyama , Yasumitsu Taira , Chima Shinohara
发明人： Jun Koshiyama , Yasumitsu Taira , Chima Shinohara
CPC分类号： G03F7/168
摘要： A cleaning liquid for lithography that exhibits equally excellent cleaning performance for resists of a wide variety of compositions, such as various resists for i-line, KrF and ArF, silicic resist and chemical amplification type positive resist, and that excels in post-treatment dryability, being free from any deterioration of resist performance by cleaning. There is provided a cleaning liquid for lithography, comprising at least one member (A) selected from among lower alkyl esters of acetic acid and propionic acid and at least one member (B) selected from among ketones having 5 to 7 carbon atoms per molecule in a mass ratio of (A):(B) of 4:6 to 7:3.
摘要翻译： 用于光刻的清洁液体，其具有相当优异的清洁性能，可用于各种组合物的抗蚀剂，例如用于i线，KrF和ArF的各种抗蚀剂，硅抗蚀剂和化学放大型正性抗蚀剂，并且具有优异的后处理干燥性 通过清洁没有抗蚀剂性能的任何劣化。 提供了一种用于光刻的清洁液体，其包含至少一种选自乙酸和丙酸的低级烷基酯和至少一种选自每分子具有5至7个碳原子的酮的成员（B） （A）:( B）的质量比为4：6〜7：3。
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