公开(公告)号：US07268029B2

公开(公告)日：2007-09-11

申请号：US10994042

申请日：2004-11-19

申请人： Eun-kuk Chung ,  Joon Kim ,  Suk-Chul Bang ,  Jong-Sun Ahn ,  Sang-hoon Lee ,  Woo-soon Jang ,  Yung-jun Kim

发明人： Eun-kuk Chung ,  Joon Kim ,  Suk-Chul Bang ,  Jong-Sun Ahn ,  Sang-hoon Lee ,  Woo-soon Jang ,  Yung-jun Kim

IPC分类号： H01L21/8238

CPC分类号： H01L21/823842 ,  H01L21/31111 ,  H01L21/31144

摘要： Provided is a method of fabricating a CMOS transistor in which, after a polysilicon layer used as a gate is formed on a semiconductor substrate, a photoresist pattern that exposes an n-MOS transistor region is formed on the polysilicon layer. An impurity is implanted in the polysilicon layer of the n-MOS transistor region using the photoresist pattern as a mask, and the photoresist pattern is removed. If the polysilicon layer of the n-MOS transistor region is damaged by the implanting of the impurity, the polysilicon layer of the n-MOS transistor region is annealed, and a p-MOS transistor gate and an n-MOS transistor gate are formed by patterning the polysilicon layer. The semiconductor substrate, the p-MOS transistor gate and the n-MOS transistor gate is cleaned with a hydrofluoric acid (HF) solution, without causing a decrease in height of the n-MOS transistor gate.

摘要翻译： 提供一种制造CMOS晶体管的方法，其中在半导体衬底上形成用作栅极的多晶硅层之后，在多晶硅层上形成曝光n-MOS晶体管区的光刻胶图案。 使用光致抗蚀剂图案作为掩模，在n-MOS晶体管区域的多晶硅层中注入杂质，除去光致抗蚀剂图案。 如果n-MOS晶体管区域的多晶硅层通过注入杂质而损坏，则n-MOS晶体管区域的多晶硅层退火，并且p-MOS晶体管栅极和n-MOS晶体管栅极由 构图多晶硅层。 用氢氟酸（HF）溶液清洗半导体衬底，p-MOS晶体管栅极和n-MOS晶体管栅极，而不会降低n-MOS晶体管栅极的高度。

公开(公告)号：US20050112814A1

公开(公告)日：2005-05-26

申请号：US10994042

申请日：2004-11-19

申请人： Eun-kuk Chung ,  Joon Kim ,  Suk-Chul Bang ,  Jong-Sun Ahn ,  Sang-hoon Lee ,  Woo-soon Jang ,  Yung-jun Kim

发明人： Eun-kuk Chung ,  Joon Kim ,  Suk-Chul Bang ,  Jong-Sun Ahn ,  Sang-hoon Lee ,  Woo-soon Jang ,  Yung-jun Kim

IPC分类号： H01L21/311 ,  H01L21/8238 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/8234 ,  H01L21/84

CPC分类号： H01L21/823842 ,  H01L21/31111 ,  H01L21/31144

摘要： Provided is a method of fabricating a CMOS transistor in which, after a polysilicon layer used as a gate is formed on a semiconductor substrate, a photoresist pattern that exposes an n-MOS transistor region is formed on the polysilicon layer. An impurity is implanted in the polysilicon layer of the n-MOS transistor region using the photoresist pattern as a mask, and the photoresist pattern is removed. If the polysilicon layer of the n-MOS transistor region is damaged by the implanting of the impurity, the polysilicon layer of the n-MOS transistor region is annealed, and a p-MOS transistor gate and an n-MOS transistor gate are formed by patterning the polysilicon layer. The semiconductor substrate, the p-MOS transistor gate and the n-MOS transistor gate is cleaned with a hydrofluoric acid (HF) solution, without causing a decrease in height of the n-MOS transistor gate.

摘要翻译： 提供一种制造CMOS晶体管的方法，其中在半导体衬底上形成用作栅极的多晶硅层之后，在多晶硅层上形成曝光n-MOS晶体管区的光刻胶图案。 使用光致抗蚀剂图案作为掩模，在n-MOS晶体管区域的多晶硅层中注入杂质，除去光致抗蚀剂图案。 如果n-MOS晶体管区域的多晶硅层通过注入杂质而损坏，则n-MOS晶体管区域的多晶硅层退火，并且p-MOS晶体管栅极和n-MOS晶体管栅极由 构图多晶硅层。 用氢氟酸（HF）溶液清洗半导体衬底，p-MOS晶体管栅极和n-MOS晶体管栅极，而不会降低n-MOS晶体管栅极的高度。