公开(公告)号：US20040241569A1

公开(公告)日：2004-12-02

申请号：US10445924

申请日：2003-05-28

申请人： Everlight USA, Inc.

发明人： Chi-Sheng Chen ,  Chan-Chan Tsai ,  Bin Jian ,  Hsin-Ming Liao

IPC分类号： G03F007/039 ,  G03F007/004

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111

摘要： A chemically-amplified resist composition is disclosed, which comprises a polymer of formula (I) below: 1 wherein R1 is H, C1-C4 alkyl, or CF3; Q is C4-C12 cycloalkyl; R2 is H, C1-C4 alkyl, or CF3; R3 is C4-C12 branched or cyclic alkyl; and xnullynullz equals to 1. The chemically-amplified resist compositions of the present invention not only can be applied maturely to general lithographic processes, especially to 193 nm lithographic process, but also have excellent photo-sensitivity, and can form a well-resolved pattern and profile.

摘要翻译： 公开了一种化学放大抗蚀剂组合物，其包含下式（I）的聚合物：其中R 1是H，C 1 -C 4烷基或CF 3; Q是C 4 -C 12环烷基; R 2是H，C 1 -C 4烷基或CF 3; R 3是C 4 -C 12支链或环状烷基; x + y + z等于1.本发明的化学增幅抗蚀剂组合物不仅可以成熟地应用于一般的光刻工艺，特别是对193nm的光刻工艺，而且还具有优异的光敏性，并且可以形成 良好的模式和形象。