摘要:
In a properly cut sample of selectively doped semiconductor material, such as germanium, with a selected bias voltage applied along the longitudinal axis, a small transverse voltage applied across one end of the sample produces a transversely polarized domain, which, under the influence of the bias voltage, drifts along the longitudinal axis of the sample. Because the drift velocity is a function of the strength of the bias voltage, and because a pulse injected into the sample can be continuously recirculated at a frequency proportional to the drift velocity, an amplitude modulated signal can be used to vary the bias voltage thereby varying the recirculation frequency of the pulse. As a result, the device can be made to act as either a frequency or a phase modulator.