公开(公告)号：US09337421B2

公开(公告)日：2016-05-10

申请号：US13874411

申请日：2013-04-30

Applicant: FENG CHIA UNIVERSITY

Inventor： Tsung-Shune Chin ,  Chih-Chung Chang ,  Yung-Ching Chu

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1616

Abstract: The present invention relates to a phase-change memory device structure and the materials used. The structure comprises a substrate, a single or multiple sandwich-memory-unit(s), a first electrode, and a second electrode. The sandwich-memory-unit contains an upper barrier layer, a lower barrier layer, and a memory layer therebetween. The thickness of the memory-layer is less than 30 nm. The present invention provides a phase-change memory device with a high Tc and a low volume changing rate during phase-change.

Abstract translation: 本发明涉及相变存储器件结构和所使用的材料。 该结构包括衬底，单个或多个夹层存储单元，第一电极和第二电极。 夹层存储单元包括上阻挡层，下阻挡层和它们之间的存储层。 记忆层的厚度小于30nm。 本发明提供了在相变期间具有高Tc和低体积变化率的相变存储器件。

公开(公告)号：US20130292631A1

公开(公告)日：2013-11-07

申请号：US13874411

申请日：2013-04-30

Applicant: FENG CHIA UNIVERSITY

Inventor： Tsung-Shune Chin ,  Chih-Chung Chang ,  Yung-Ching Chu

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1616

Abstract: The invention discloses a phase-change memory device structure and the materials used. The structure includes a substrate; a single or multiple sandwich-memory-unit(s); a first and a second electrode electrically connecting to the first and the second sides of the sandwich-memory-units and a dielectric layer used as the insulator required by the memory device. The sandwich-memory-unit composes of a memory-layer, thinner than 30 nm, sandwiched between an upper and a lower barrier-layers. The barrier-layer is either an electrical conductor in case of vertical memory-cells or an electrical insulator in case of parallel memory-cells. The sandwich-memory-unit is characteristic of increased crystallization temperature of at least 50° C. as the thickness of the memory-layer is reduced from 15 to 5 nm; and the volume change of the memory-layer is less than 3% during phase change. The thickness and memory-material in each sandwich-memory-unit can be different in the multiple sandwich-memory-units.

Abstract translation: 本发明公开了一种相变存储器件结构和所使用的材料。 该结构包括基底; 一个或多个三明治记忆单元; 电连接到夹层存储单元的第一和第二侧的第一和第二电极以及用作存储器件所需的绝缘体的电介质层。 夹层记忆单元由薄层和30nm以下的记录层组成，夹在上下阻挡层之间。 在垂直存储单元的情况下，阻挡层是电导体，或者在并行存储单元的情况下为电绝缘体。 随着记忆层的厚度从15nm降低到5nm，夹层记忆单元是结晶温度升高至少50℃的特征。 在相变期间内存层的体积变化小于3％。 每个夹层存储单元中的厚度和记忆材料在多个夹层存储单元中可以是不同的。