公开(公告)号：US20230074666A1

公开(公告)日：2023-03-09

申请号：US17549850

申请日：2021-12-13

申请人： FENG CHIA UNIVERSITY

发明人： Jin-Fa Chang ,  Yo-Sheng Lin

IPC分类号： H03F3/16

摘要： A transistor comprises a drain, a gate, a source, a body terminal and a body resistance. The drain is connected to a supply voltage line to receive a supply voltage. The gate is connected to a control voltage line to receive a control voltage. The source is connected to a input line to receive a input radio frequency signal. The body terminal is connected to the drain. The body resistance is disposed between the drain and the body terminal. By the foregoing configuration, the leakage current of the substrate is reduced and the threshold voltage of the transistor is reduced to conform to the present low power design.

公开(公告)号：US11699980B2

公开(公告)日：2023-07-11

申请号：US17549850

申请日：2021-12-13

申请人： FENG CHIA UNIVERSITY

发明人： Jin-Fa Chang ,  Yo-Sheng Lin

IPC分类号： H03F3/16 ,  H03F1/22

CPC分类号： H03F3/16

摘要： A transistor comprises a drain, a gate, a source, a body terminal and a body resistance. The drain is connected to a supply voltage line to receive a supply voltage. The gate is connected to a control voltage line to receive a control voltage. The source is connected to a input line to receive a input radio frequency signal. The body terminal is connected to the drain. The body resistance is disposed between the drain and the body terminal. By the foregoing configuration, the leakage current of the substrate is reduced and the threshold voltage of the transistor is reduced to conform to the present low power design.