公开(公告)号：US20140308819A1

公开(公告)日：2014-10-16

申请号：US14316327

申请日：2014-06-26

Applicant: FUJIFILM CORPORATION

Inventor： Masashi ENOKIDO ,  Tadashi INABA ,  Atsushi MIZUTANI

IPC: H01L21/306 ,  H01L21/308

CPC classification number: H01L21/30608 ,  H01L21/02068 ,  H01L21/3081 ,  H01L21/32134 ,  H01L27/10852 ,  H01L28/92

Abstract: A method of producing a semiconductor substrate product, the method containing: a step of preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; a step of preparing a semiconductor substrate having a silicon film comprising a polycrystalline silicon film or an amorphous silicon film; and a step of heating the aqueous solution at 80° C. or higher and applying the resultant aqueous solution onto the semiconductor substrate to etch at least a part of the silicon film.

Abstract translation: 一种制造半导体衬底产品的方法，该方法包括：制备含有7质量％以上且25质量％以下的季铵烷基氢氧化铵的水溶液的工序; 制备具有包括多晶硅膜或非晶硅膜的硅膜的半导体衬底的步骤; 以及在80℃以上加热水溶液的步骤，将所得水溶液施加到半导体衬底上以蚀刻至少一部分硅膜。